BU2525AF Philips Semiconductors, BU2525AF Datasheet

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BU2525AF

Manufacturer Part Number
BU2525AF
Description
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU2525AF
Manufacturer:
ON
Quantity:
30 000
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
without heatsink compound
with heatsink compound
in free air
C
Csat
BE
hs
BE
hs
1
= 8.0 A; I
2
= 0 V
= 8.0 A; I
= 0 V
25 ˚C
3
25 ˚C
B
= 1.6 A
B(end)
= 1.1 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
8.0
0.2
-65
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2525AF
MAX.
MAX.
MAX.
1500
e
1500
c
0.35
800
800
200
150
150
5.0
3.7
2.8
12
30
45
12
30
12
45
8
7
-
-
Rev 1.400
UNIT
UNIT
UNIT
K/W
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2525AF Summary of contents

Page 1

... 8 1.1 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU2525AF TYP. MAX. UNIT - 1500 V - 800 5 0.2 0.35 s SYMBOL ...

Page 2

... 100 mA CONDITIONS MHz 8 260 H; C Csat 1 2 B(end) B (-dI / Product specification BU2525AF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13.5 - ...

Page 3

... ICsat hFE 100 t IBend 0.1 t Fig.6. Typical DC current gain Product specification BU2525AF ICsat IBend t - IBM + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb BU2525AF 125 100 parameter V CE Rev 1.400 ...

Page 4

... B 4 Product specification BU2525AF VCESAT / V BU2525AF 125 sat = parameter Eoff / uJ BU2525AF 0 85˚C j Eoff = parameter kHz BU2525AF 32 kHz parameter I ...

Page 5

... 0. Fig.15. Forward bias safe operating area. T 1E+00 I & I CDC Second-breakdown limits independant of temperature Product specification BU2525AF BU2525AF 0.01 ICM 40 us ICDC 100 us Ptot 100 1000 VCE / single pulse; parameter Mounted with heatsink compound. ...

Page 6

... Fig.16. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2525AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.400 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2525AF Rev 1.400 ...

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