IRF1310NS International Rectifier Corp., IRF1310NS Datasheet

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IRF1310NS

Manufacturer Part Number
IRF1310NS
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for low-
profile applications.
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
2
AS
AR
J
STG
D
D
GS
Pak is suitable for high current applications because of
JA
@ T
@ T
JC
@T
@T
Advanced Process Technology
Surface Mount (IRF1310NS)
Low-profile through-hole (IRF1310NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
2
C
C
Pak is a surface mount power package capable of
A
C
= 25°C
= 25°C
= 100°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ 10V
@ 10V
This
G
300 (1.6mm from case )
Typ.
–––
–––
D P ak
IRF1310NS/L
HEXFET
2
-55 to + 175
D
S
Max.
140
160
± 20
420
3.8
1.1
5.0
42
30
22
16
®
R
T O -26 2
Power MOSFET
DS(on)
V
Max.
0.95
40
DSS
I
D
= 42A
PD - 91514B
= 0.036
=100V
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
°C
W
W
A
V
A
5/13/98

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IRF1310NS Summary of contents

Page 1

... Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...

Page 2

... IRF1310NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM 4.5V 100 0.1 100 V DS Fig 2. Typical Output Characteristics 3.0 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 9.0 10 Junction Temperature ( C) Fig 4. Normalized On-Resistance IRF1310NS/L 4.5V 20us PULSE WIDTH 175 100 , Drain-to-Source Voltage ( 10V 100 120 140 160 180 o J Vs. Temperature ...

Page 4

... IRF1310NS/L 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 10 1 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1310NS D.U. 10V µ d(off) f ...

Page 6

... IRF1310NS Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1000 800 ...

Page 7

... D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF1310NS/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period ...

Page 8

... IRF1310NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP. ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 IRF1310NS/L ...

Page 10

... IRF1310NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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