IRFB260N

Manufacturer Part NumberIRFB260N
ManufacturerInternational Rectifier Corp.
IRFB260N datasheet
 


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Applications
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
l
Simplify Design, (See App. Note AN1001)
l
Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
Notes  through … are on page 8
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SMPS MOSFET
IRFB260N
HEXFET
V
DSS
200V
to
OSS
@ 10V
GS
@ 10V
GS
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
PD - 94270
®
Power MOSFET
R
max
I
DS(on)
D
0.040
56A
TO-220AB
Max.
Units
56
40
A
220
380
W
2.5
W/°C
± 20
V
10
V/ns
°C
Max.
Units
0.40
–––
°C/W
62
1
8/29/01

IRFB260N Summary of contents