IRFP064N International Rectifier Corp., IRFP064N Datasheet

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IRFP064N

Manufacturer Part Number
IRFP064N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
JA
@ T
@ T
JC
CS
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
300 (1.6mm from case )
Typ.
0.24
–––
–––
D
S
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
110
Max.
80
± 20
390
200
480
1.3
5.0
59
20
TO-247AC
IRFP064N
R
®
DS(on)
Power MOSFET
V
I
D
Max.
0.75
DSS
–––
40
= 110A
= 0.008
PD - 9.1383A
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
8/25/97

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IRFP064N Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G Parameter @ 10V GS @ 10V GS Parameter PD - 9.1383A IRFP064N ® HEXFET Power MOSFET 55V DSS R = 0.008 DS(on 110A D S TO-247AC Max. 110 80 390 200 1 ...

Page 2

... IRFP064N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 1000 100 Fig 2. Typical Output Characteristics = IRFP064N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 100 4.5V 20 µ IDTH 5° 0 Drain-to-Source V oltage ( ...

Page 4

... IRFP064N 8000 iss gs 7000 rss oss ds 6000 5000 4000 3000 2000 1000 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 175 ° 5°C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit 125 150 175 ° Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRFP064N D.U. 10V Pulse Width µs Duty Factor ...

Page 6

... IRFP064N V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform L 1200 1000 + 800 0.01 600 400 V (BR)DSS 200 V DD ...

Page 7

... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFP064N + =10V ...

Page 8

... IRFP064N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches .90 (. . 4 4 . ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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