IRG4PC50F

Manufacturer Part NumberIRG4PC50F
ManufacturerInternational Rectifier Corp.
IRG4PC50F datasheet
 


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Features
Features
Features
Features
Features
• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Wt
Weight
www.irf.com
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-247AC
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.64
0.24
–––
–––
40
6 (0.21)
–––
= 600V
1.45V
= 39A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
12/30/00

IRG4PC50F Summary of contents