IRG4PH50S International Rectifier Corp., IRG4PH50S Datasheet

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IRG4PH50S

Manufacturer Part Number
IRG4PH50S
Description
Manufacturer
International Rectifier Corp.
Datasheet

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• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
Features
Features
Features
Features
Features
Thermal Resistance
Benefits
Absolute Maximum Ratings
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
Generation 3
www.irf.com
parameter distribution and higher efficiency than
C
C
CM
LM
industry-standard Generation 3 IR IGBT's
voltage and low operating frequencies ( < 1kHz)
CES
GE
ARV
D
D
J
STG
θCS
θJA
θJC
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
Q
R
S
G
n-channel
300 (0.063 in. (1.6mm) from case)
6.0 (0.21)
Typ.
0.24
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to +150
IRG4PH50S
TO-247AC
Max.
1200
114
114
±20
270
200
57
33
80
V
@V
CE(on) typ.
V
Max.
0.64
GE
–––
–––
40
CES
= 15V, I
=1200V
PD -91712A
= 1.47V
C
= 33A
Units
g (oz)
°C/W
7/7/2000
Units
mJ
°C
W
V
A
V
1

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IRG4PH50S Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH50S n-channel -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Typ. ––– 0.24 ––– ...

Page 2

... IRG4PH50S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) DV /DT Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... Power Dissipation = 40W reque ncy (kH z) (Load Current = I of fundamental) RMS 1000 100 ° 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4PH50S Triangular wave: Clamp voltage: 80% of rated A 10 ° ° 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PH50S 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V PULSE WIDTH 2.0 1.5 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs ...

Page 5

... 100 0 Fig Typical Gate Charge vs.  1000 15V 960V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH50S = 400V = 33A 100 125 150 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 15Ω 5Ohm  ...

Page 6

... IRG4PH50S  120 Ω 5Ohm 150 C ° 960V CC 100 V = 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 100 10  SAFE OPERATING AREA Fig Reverse Bias SOA = 20V ...

Page 7

... Load Test Circuit D river* 50V 1000V Q www.irf.com 0-960V R Fig. 13b - . IRG4PH50S 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T ----V Fig ...

Page 8

... IRG4PH50S Case Outline and Dimensions — TO-247AC (. (. (. (. .80 (.583 ) * 14 .20 (.559 ) (. (. (. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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