IRG4PH50S

Manufacturer Part NumberIRG4PH50S
ManufacturerInternational Rectifier Corp.
IRG4PH50S datasheet
 


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Features
Features
Features
Features
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
I
Clamped Inductive Load Current
LM
V
Gate-to-Emitter Voltage
GE
E
Reverse Voltage Avalanche Energy
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
IRG4PH50S
C
G
E
n-channel
Q
R
S
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
6.0 (0.21)
PD -91712A
V
=1200V
CES
V
= 1.47V
CE(on) typ.
@V
= 15V, I
= 33A
GE
C
TO-247AC
Max.
Units
1200
V
57
33
A
114
114
±20
V
270
mJ
200
W
80
°C
Max.
Units
0.64
–––
°C/W
40
–––
g (oz)
1
7/7/2000

IRG4PH50S Summary of contents