IRGB8B60K International Rectifier Corp., IRGB8B60K Datasheet

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IRGB8B60K

Manufacturer Part Number
IRGB8B60K
Description
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGB8B60K
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRGB8B60K
Quantity:
25 780
INSULATED GATE BIPOLAR TRANSISTOR
www.irf.com
V
I
I
I
I
V
P
P
T
T
R
R
R
R
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
C
C
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
Weight
Parameter
Parameter
d
IRGB8B60K
TO-220AB
G
e
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
E
C
IRGS8B60K
-55 to +175
IRGSL8B60K
D
Max.
Typ.
0.50
1.44
600
±20
167
–––
–––
–––
28
19
56
56
83
2
IRGB8B60K
IRGS8B60K
V
I
t
V
Pak
C
sc
CES
CE(on)
>10µs, T
= 20A, T
= 600V
typ. = 1.8V
Max.
0.90
–––
–––
62
40
IRGSL8B60K
PD - 94545C
C
J
TO-262
=100°C
=150°C
Units
Units
°C/W
°C
W
V
A
V
g
10/16/03
1

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IRGB8B60K Summary of contents

Page 1

... G n-channel TO-220AB IRGB8B60K Parameter 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– d ––– e ––– ––– 94545C IRGB8B60K IRGS8B60K IRGSL8B60K V = 600V C CES I = 20A, T =100° >10µs, T =150° typ ...

Page 2

IRGB/S/SL8B60K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 10 1 0.1 0. 100 V ...

Page 4

IRGB/S/SL8B60K 18V 35 VGE = 15V VGE = 12V 30 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output ...

Page 5

4. 8. 16A (V) Fig Typical V vs -40°C ...

Page 6

IRGB/S/SL8B60K 600 500 400 E OFF 300 200 E ON 100 (A) Fig Typ. Energy Loss vs 150°C; L=1.1mH 50Ω 700 E ...

Page 7

Cies Coes 100 Cres (V) Fig. 16- Typ. Capacitance vs 0V 1MHz 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 8

IRGB/S/SL8B60K DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DC DUT Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 8 L VCC + diode clamp / DUT 360V Fig.C.T.4 - Switching Loss Circuit V ...

Page 9

Vce 400 90% Ice 300 5% Vce 200 5% Ice 100 Ice 0 Eoff Loss -100 -200 0 0.2 0.4 0.6 Time (uS) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J ...

Page 10

IRGB/S/SL8B60K Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING ...

Page 11

IRGB/S/SL8B60K 11 ...

Page 12

IRGB/S/SL8B60K TO-262 Package Outline TO-262 Part Marking Information 12 IGBT 1- GATE 2- COLLECTOR 3- EMITTER www.irf.com ...

Page 13

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  ...

Page 14

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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