IRGPS60B120KD International Rectifier Corp., IRGPS60B120KD Datasheet
IRGPS60B120KD
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IRGPS60B120KD Summary of contents
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... Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Recommended Clip Force Wt Weight Le Internal Emitter Inductance (5mm from package) www.irf.com IRGPS60B120KD Motor Control Co-Pack IGBT C V CES V typ. = 2.50V CE(on 60A, Tj=25°C N-channel CE Super-247™ ...
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... IRGPS60B120KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV Temperature Coeff. of Breakdown Voltage /ΔT (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– Δ Δ GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...
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... Fig Maximum DC Collector Current vs. Case Temperature 1000 100 0 100 V CE (V) Fig Forward SOA T = 25°C; T 150°C ≤ www.irf.com IRGPS60B120KD 700 600 500 400 300 200 100 0 0 Fig Power Dissipation vs. Case † 1000 2 μs 10 μs 100 100 μs 1ms 10 10ms ...
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... IRGPS60B120KD 120 18V 100 VGE = 15V VGE = 12V VGE = 10V 80 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J 120 18V 100 VGE = 15V VGE = 12V VGE = 10V 80 VGE = 8. (V) Fig ...
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... 30A 60A 120A (V) Fig Typical 125°C J www.irf.com IRGPS60B120KD Fig Typical V vs 500 450 400 350 300 250 200 150 125°C ...
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... IRGPS60B120KD 12000 10000 8000 E OFF 6000 4000 2000 (A) Fig Typ. Energy Loss vs 125°C; L=200μ 4.7Ω 15V G GE 25000 20000 E ON 15000 E OFF 10000 5000 Ω ) Fig Typ. Energy Loss vs 125°C; L=200μH; V ...
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... Ω Ω 100 Ω 500 di F /dt (A/μs) Fig. 19- Typical Diode 600V 15V 60A 125° www.irf.com IRGPS60B120KD 100 0 Fig Typical Diode I vs Ω 100 Ω ...
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... IRGPS60B120KD 4000 3500 3000 2500 2000 1500 1000 500 0 0 10000 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 4.7 Ω 22 Ω 47 Ω 100 Ω (A) Fig Typical Diode E vs 125° Cies 14 12 ...
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... D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGPS60B120KD 0.001 0. Rectangular Pulse Duration (sec) 0.001 0. Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc ...
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... IRGPS60B120KD DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver D C DUT Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.5 - Resistive Load Circuit 10 L VCC 80 V diode clamp / DUT 900V Fig.C.T.4 - Switching Loss Circuit DUT VCC Rg L DUT 1000V Rg Fig.C.T.2 - RBSOA Circuit DUT / ...
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... Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 400 200 -200 -400 Peak -600 I RR -800 -1000 -0.25 0.25 0.75 time (μS) www.irf.com IRGPS60B120KD Fig. WF2 - Typ. Turn-On Loss Waveform @ Tj=125°C using Fig. CT.4 90 800 80 700 70 600 60 500 50 400 40 300 30 200 20 100 -10 -100 2 ...
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... IRGPS60B120KD Super-247™ Package Outline 12 www.irf.com ...
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... CES GE ‚ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRGPS60B120KD IRFPS37N50A A8B9 TOP = 4.7Ω. G Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. ...