IRLZ44N International Rectifier Corp., IRLZ44N Datasheet

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IRLZ44N

Manufacturer Part Number
IRLZ44N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
T
I
I
I
P
V
E
I
E
dv/dt
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Min.
––––
––––
––––
300 (1.6mm from case)
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
Typ.
––––
––––
0.50
Max.
0.71
160
110
±16
210
TO-220AB
5.0
47
33
25
11
®
R
IRLZ44N
Power MOSFET
DS(on)
Max.
––––
V
1.4
62
DSS
I
PD - 9.1346B
D
= 47A
= 0.022
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
8/25/97

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IRLZ44N Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient 10V GS @ 10V GS 300 (1.6mm from case) Min. –––– –––– –––– 9.1346B IRLZ44N ® HEXFET Power MOSFET 55V DSS R = 0.022 DS(on 47A D S TO-220AB Max ...

Page 2

... IRLZ44N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics A 10 100 = IRLZ44N 1000 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V 100 10 2 .5V 20 µ LSE 75° ...

Page 4

... IRLZ44N 2800 iss 2400 rss oss 2000 1600 1200 800 C rss 400 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° °C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRLZ44N D.U. 5.0V Pulse Width µs Duty Factor ...

Page 6

... IRLZ44N 5 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform L D.U. 0.01 V (BR)DSS V DD 500 400 300 200 100 ...

Page 7

... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period V GS Current di/dt Diode Recovery dv/ Forward Drop IRLZ44N + =10V ...

Page 8

... IRLZ44N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. & ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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