LM5110-2SD National Semiconductor, LM5110-2SD Datasheet

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LM5110-2SD

Manufacturer Part Number
LM5110-2SD
Description
Manufacturer
National Semiconductor
Datasheet
© 2003 National Semiconductor Corporation
LM5110
Dual 5A Compound Gate Driver with Negative Output
Voltage Capability
General Description
The LM5110 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each “compound” output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Sepa-
rate input and output ground pins provide Negative Drive
Capability allowing the user to drive MOSFET gates with
positive and negative VGS voltages. The gate driver control
inputs are referenced to a dedicated input ground (IN_REF).
The gate driver outputs swing from V
V
ability to hold MOSFET gates off with a negative VGS volt-
age reduces losses when driving low threshold voltage
MOSFETs often used as synchronous rectifiers. When driv-
ing with conventional positive only gate voltage, the IN_REF
and V
common ground. Under-voltage lockout protection and a
shutdown input pin are also provided. The drivers can be
operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 and the thermally-enhanced LLP-10 packages.
Features
n Independently drives two N-Channel MOSFETs
n Compound CMOS and bipolar outputs reduce output
Ordering Information
LM5110-1/2/3 M
LM5110-1/2/3 MX
LM5110-1/2/3 SD
LM5110-1/2/3 SDX
EE
current variation
which can be negative with respect to IN_REF. The
Order Number
EE
pins are connected together and referenced to a
SOIC-8
SOIC-8
LLP-10
LLP-10
Package Type
CC
to the output ground
DS200792
M08A
M08A
SDC10A
SDC10A
NSC Package Drawing
n 5A sink/3A source current capability
n Two channels can be connected in parallel to double the
n Independent inputs (TTL compatible)
n Fast propagation times (25 ns typical)
n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
n Dedicated input ground pin (IN_REF) for split supply or
n Outputs swing from V
n Available in dual non-inverting, dual inverting and
n Shutdown input provides low power mode
n Supply rail under-voltage lockout protection
n Pin-out compatible with industry standard gate drivers
Typical Applications
n Synchronous Rectifier Gate Drivers
n Switch-mode Power Supply Gate Driver
n Solenoid and Motor Drivers
n Power Level Shifter
Package
n SOIC-8
n LLP-10 (4 mm x 4 mm)
drive current
load)
single supply operation
relative to input ground
combination configurations
CC
Shipped in anti-static units
2500 shipped in Tape & Reel
1000 shipped in Tape & Reel
4500 shipped in Tape & Reel
to V
EE
which can be negative
Supplied As
October 2003
www.national.com

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LM5110-2SD Summary of contents

Page 1

... Dual 5A Compound Gate Driver with Negative Output Voltage Capability General Description The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and effi- ciency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads ...

Page 2

... Pin Configurations SOIC-8 Block Diagram www.national.com 20079201 NC - NOT CONNECTED Block Diagram of LM5110 2 20079202 LLP-10 20079203 ...

Page 3

Typical Application Simplified Power Converter Using Synchronous Rectifiers with Negative Off Gate Voltage 3 20079204 www.national.com ...

Page 4

... Configuration Table Part Number “A” Output Configuration LM5110-1M Non-Inverting LM5110-2M Inverting LM5110-3M Inverting LM5110-1SD Non-Inverting LM5110-2SD Inverting LM5110-3SD Inverting www.national.com Description Ground reference for control Connect to V inputs voltage swing. Connect to system logic ground reference for positive and negative output voltage swing. ‘ ...

Page 5

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications IN_REF IN_REF, nSHDN to IN_REF Electrical Characteristics T = −40˚C to +125˚ 12V specified. Symbol Parameter V Operating Range ...

Page 6

Electrical Characteristics T = −40˚C to +125˚ 12V specified. Symbol Parameter SWITCHING CHARACTERISTICS td1 Propagation Delay Time Low to High, IN rising (IN to OUT) td2 Propagation Delay Time High to Low, IN falling (IN ...

Page 7

Typical Performance Characteristics Supply Current vs Frequency Rise and Fall Time vs Supply Voltage Rise and Fall Time vs Capacitive Load Supply Current vs Capacitive Load 20079210 Rise and Fall Time vs Temperature 20079212 Delay Time vs Supply Voltage 20079214 ...

Page 8

... UVLO Thresholds and Hysteresis vs Temperature ground. The LM5110 pinout was designed for compatibility with industry standard gate drivers in single supply gate driver applications. Pin 1 (IN_REF) on the LM5110 is a no-connect on standard driver IC’s. Connecting pin 1 to pin the printed circuit board accommodates the pin-out EE of both the LM5110 and competitive drivers ...

Page 9

... The Shutdown pin (nSHDN TTL compatible logic input provided to enable/disable both driver channels. When nSHDN is in the logic low state, the LM5110 is switched to a low power standby mode with total supply current less than 25 µA. This function can be effectively used for start-up, thermal overload, or short circuit fault protection ...

Page 10

... GATE P = 12V 300 kHz = 0.108W. DRIVER If both channels of the LM5110 are operating at equal fre- quency with equivalent loads, the total losses will be twice as this value which is 0.216W. In addition to the above gate charge power dissipation, - transient power is dissipated in the driver during output transitions ...

Page 11

... Thermal Performance (on) of the LM5110 output at T (max) is 2.5Ω, this equation S J yields I (max) of 391mA which is much smaller than 5A SINK peak pulsed currents. Similarly, the maximum continuous source current can be calculated as where V is the voltage drop across hybrid output stage DIODE which varies over temperature and can be assumed to be about 1 ...

Page 12

Physical Dimensions unless otherwise noted NOTES: UNLESS OTHERWISE SPECIFIED 1. STANDARD LEAD FINISH TO BE 200 MICROINCHES/5.08 MICROMETERS MINIMUM LEAD/TIN(SOLDER) ON COPPER. 2. DIMENSION DOES NOT INCLUDE MOLD FLASH. 3. REFERENCE JEDEC REGISTRATION MS-012, VARIATION AA, DATED MAY 1990. www.national.com ...

Page 13

... BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...

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