MGF4919G Mitsumi Electronics, Corp., MGF4919G Datasheet
MGF4919G
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MGF4919G Summary of contents
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... SUPER LOW NOISE InGaAs HEMT Unit:millimeters 4.0±0.2 1.85±0.2 1 0.5±0. 0.5±0.15 3 ø1.8±0.2 GATE 1 2 SOURCE 3 DRAIN Limits Unit Min Typ Max – -3 – – – – mA – -1.5 -0.1 – 75 – mS 12.0 13.5 – MGF4916G 0.80 – – – – MGF4919G 0.50 Nov. ´97 V µ ...
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... TYPICAL CHARACTERISTICS (Ta=25˚ =25˚ = -0.5 -1.0 GATE TO SOURCE VOLTAGE V NF & Gs vs. I (MGF4919G) T =25˚ =2V DS f=12GHz G 0.9 0.8 0.7 0.6 NF 0.5 0.4 0 DRAIN CURRENT I MITSUBISHI SEMICONDUCTOR GaAs FET (V) DRAIN TO SOURCE VOLTAGE V ...
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... SUPER LOW NOISE InGaAs HEMT S22 MSG/MAG K (dB) Mag. Angle 0.533 -19.2 0.10 28.8 0.514 -33.4 0.19 26.5 0.489 -42.9 0.27 24.3 0.457 -58.2 0.35 21.6 0.424 -71.6 0.43 19.8 0.391 -87.5 0.50 18.1 0.369 -100.6 0.57 16.8 0.357 -110.8 0.64 15.9 0.357 -122.3 0.69 15.1 0.351 -133.0 0.72 14.7 0.339 -143.5 0.80 14.0 0.329 -154.0 0.86 13.5 0.328 -163.9 0.91 13.0 0.328 -171.3 0.95 12.7 0.343 179.5 0.96 12.7 0.351 170.5 0.98 12.7 0.337 161.8 1.01 12.5 0.310 151.6 1.11 12.1 NFmin.(dB) Gs MGF4919G (dB) 0.24 18.3 0.35 15.9 0.45 13.5 0.50 12.3 0.61 9.9 Nov. ´97 ...