RA08H1317M Mitsumi Electronics, Corp., RA08H1317M Datasheet
RA08H1317M
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RA08H1317M Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V =0V), only a small leakage current flows into the drain GG and the RF input signal attenuates ...
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... Harmonic o V Input VSWR Gate Current GG V — Stability Load VSWR=4:1 V — Load VSWR Tolerance Load VSWR=20:1 All parameters, conditions, ratings, and limits are subject to change without notice. RA08H1317M CONDITIONS V <3. <12.5V, P =0mW DD in f=135-175MHz = =+25° ...
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... INPUT VSWR versus FREQUENCY =3.5V out =8W in out 2 0 130 140 150 160 FREQUENCY f(MHz) RA08H1317M =Z =50 , unless otherwise specified 140 120 100 80 =8W out 60 V =12. =20mW 170 180 Now Preparing MITSUBISHI ELECTRIC ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (T =+25°C, Z case RA08H1317M =Z =50 , unless otherwise specified Now Preparing MITSUBISHI ELECTRIC 4/9 MITSUBISHI RF POWER MODULE Dec 2002 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 30.0 0.2 26.6 0.2 (1.7) 21.2 0.2 (4. 6.1 1 13.7 1 18.8 1 23.9 1 RA08H1317M 2-R1.5 0 MITSUBISHI ELECTRIC 5/9 MITSUBISHI RF POWER MODULE Ø0.45 0. Input ( Gate Voltage ( Drain Voltage ( Output (P ) out 5 RF Ground (Case) 23 Dec 2002 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Signal Pre- Attenuator Attenuator Generator amplifier C1, C2: 4700pF, 22uF in parallel EQUIVALENT CIRCUIT 2 1 RA08H1317M Power DUT Meter =50 G Directional Coupler Power DC Power Supply V Supply MITSUBISHI ELECTRIC 6/9 MITSUBISHI RF POWER MODULE ...
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... When mounting the module with the thermal resistance of 2.50 °C/W, the channel t emperature of each stage transistor is 39.1 °C ch1 air 54.0 °C ch2 air The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA08H1317M =40% th(ch-case (°C/W) (A) (V) 4 ...
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... Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA08H1317M MITSUBISHI ELECTRIC 8/9 MITSUBISHI RF POWER MODULE ...
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... Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA08H1317M GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 FRANCE: Mitsubishi Electric Europe B ...