RA45H7687M1-101 Mitsumi Electronics, Corp., RA45H7687M1-101 Datasheet
RA45H7687M1-101
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RA45H7687M1-101 Summary of contents
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... How ever applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA45H7687M1-101 RA45H7687M1 BLOCK DIAGRAM =V =0V), only a small GG2 ...
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... Output Power 2* V out2 V 1.5<P — Stability Load VSWR=3:1 V — Load VSWR Tolerance P Load VSWR=20:1 *: This is guaranteed as design value. All parameters, conditions, ratings, and limits are subject to change without notice. RA45H7687M1 RoHS COMPLIANCE =Z =50:, unless otherwise specified CONDITIONS ± V =3.4V 7%, V <5V, P GG1 GG2 in V < ...
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... INPUT POW ER P (dBm) in OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER - INPUT POW ER P (dBm) in RA45H7687M1 RoHS COMPLIANCE =Z =50:, unless otherwise specified - GG1 -40 V GG2 P in -50 -60 V =12 ...
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... V =12. =3.4V GG1 P =2dBm (dBm ) out OLTA GE V RA45H7687M1 RoHS COMPLIANCE =Z =50:, unless otherwise specified WER and D R AIN f=870M GG1 GG2 P =50m ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 3 ¶ ¶ ¶ ¶ RA45H7687M1 RoHS COMPLIANCE ¶ ¶ ¶ ¶ ¶ Input added Gate Voltage 1(P 2 Gate Voltage 2(V 3 Drain Voltage ( Output ( Ground (Case) MITSUBISHI ELECTRIC 5/9 MITSUBISHI RF POWER MODULE & ...
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... C3, C4: 4700pF, 22uF in parallel V =3.4V GG1 EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm. External resistance connected to V GG1 that doesn't prevent RF characteristic on this module. RA45H7687M1 RoHS COMPLIANCE Pow er DUT Meter =50 G Directional ...
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... When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is 47.5 °C ch1 air 81.3 °C ch2 air The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA45H7687M1 RoHS COMPLIANCE =33% th(ch-case (°C/W) (A) (V) 3 ...
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... Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA45H7687M1 RoHS COMPLIANCE ). GG2 =5V (maximum), the nominal output power becomes available ...
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... Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA45H7687M1 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-4140 FRANCE: Mitsubishi Electric Europe B ...