RD60HUF1 Mitsumi Electronics, Corp., RD60HUF1 Datasheet
RD60HUF1
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RD60HUF1 Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. FEATURES •High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ.on UHF Band APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 350 Ta=+25°C 300 f=1MHz 250 200 150 100 Vds(V) RD60HUF1 MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 160 200 0 Vds VS. Ciss CHARACTERISTICS 400 350 Vgs=3.1V 300 250 Ta=+25° ...
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... Pin(dBm) Vdd-Po CHARACTERISTICS 90 80 Ta=25°C f=520MHz 70 Pin=10W Idq=2.5A 60 Zg=ZI=50 ohm Vdd(V) RD60HUF1 MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W Pin-Po CHARACTERISTICS 100 100 Vgs-Ids CHARACTERISTICS Vds=10V 16 Po Tc=-25~+75° ...
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... Silicon MOSFET Power Transistor 520MHz,60W 10pF 18/10pF RD60HUF1 2pF 18/10pF 100 Note:B oard m aterial-Teflon s ubs trate trip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m Dim ens ions :m m MITSUBISHI ELECTRIC 4/7 RD60HUF1 C3 RF-OUT 220pF REV.1 14 May. 2003 ...
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... Zin f=300MHz Zout Zin , Zout f Zin (MHz) (ohm) 300 0.96-j0.22 440 2.00-j3.10 520 0.77+j0.66 RD60HUF1 MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W f=520MHz Zout Zo=10 f=300MHz Zin f=440MHz Zout f=440MHz Zin Zout (ohm) Po=70W, Vdd=12.5V,Pin=10W 0.75-j0.12 Po=65W, Vdd=12.5V,Pin=10W 0.30-j1.40 Po=60W, Vdd=12.5V,Pin=10W 0.96+j0.49 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. S11 [MHz] (mag) (ang) 10 0.909 -156.8 50 0.910 -177.1 100 0.923 178.6 150 0.935 175.5 175 0.944 173.9 200 0.949 172.5 250 0.957 169.2 300 0.961 166.2 350 0.964 163.3 400 0 ...
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... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD60HUF1 MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W MITSUBISHI ELECTRIC 7/7 REV.1 14 May. 2003 ...