APT50GT120B2RDLG Microsemi Corporation, APT50GT120B2RDLG Datasheet - Page 9

• Manufacturer Part Number: APT50GT120B2RDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: T-MAX ; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
T-MAX
Dimensions in Millimeters and (Inches)
passes through zero.
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
e1 SAC: Tin, Silver, Copper
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
®
and t rr .
(B2) Package Outline
1.01 (.040)
1.40 (.055)
di
(.177) Max.
5.45 (.215) BSC
F
/dt Adjust
4.50
Figure 32. Diode Test Circuit
2-Plcs.
30μH
15.49 (.610)
16.26 (.640)
Zero
V r
APT10078BLL
1
TRANSFORMER
PEARSON 2878
CURRENT
Emmiter
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
(Anode)
2
D.U.T.
(Cathode)
3
APT50GT120B2RDL(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM