1618-35 Microsemi Corporation, 1618-35 Datasheet

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1618-35

Manufacturer Part Number
1618-35
Description
Bipolar/LDMOS Transistor
Manufacturer
Microsemi Corporation
Datasheet
ELECTRICAL CHARACTERISTICS @ 25 C
Issue A, July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
GENERAL DESCRIPTION
The 1618-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1600-1800 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
Maximum Voltage and Current
BVces
BVebo
Ic
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
SYMBOL
Pout
Pin
Pg
VSWR
BVces
BVebo
H
Cob
jc
c
FE
1
Collector Current
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
CHARACTERISTICS
o
F = 1600-1800 MHz
Vcb = 28 Volts
Pin = 7 Watts
As Above
F = 1.1 GHz, Pin = 7 W
- 65 to + 200 C
Ic = 20 mA
Ie = 15 mA
Vce = 5 V, Ic = 1 A
F = 1 MHz, Vcb = 28V
TEST CONDITIONS
135 Watts
3.5 Volts
45 Volts
+ 200 C
12 A
O
o
o
Microwave 1600 - 1800 MHz
35 Watt - 28 Volts, Class C
1618-35
MIN
3.5
35
45
10
55AW, STYLE 1
CASE OUTLINE
TYP
7.0
40
MAX
10:1
100
1.3
7
UNITS
Watt
Watt
Volts
Volts
o
C/W
dB
pF
%

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1618-35 Summary of contents

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... GENERAL DESCRIPTION The 1618- COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1600-1800 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package ...

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... 1618-35 ...

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