IXGH30H30 IXYS Corporation, IXGH30H30 Datasheet

IXGH30H30

Manufacturer Part Number

IXGH30H30

Description

300V HiPerFET IGBT

Manufacturer

IXYS Corporation

Datasheet

1.IXGH30H30.pdf (4 pages)

Current page: 1 of 4
Download datasheet (74Kb)

HiPerFAST

Preliminary data

Symbol

SSOA

(RBSOA)

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

Weight

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

C25

C90

CES

GES

stg

CGR

CES

GES

GEM

GE(th)

CE(sat)

CES

Test Conditions

Continuous

Transient

Clamped inductive load, L = 100 mH @ 0.8 V

Mounting torque (M3)

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 25°C

= 250 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

C90

, V

CES

= 15 V

= ±20 V

= 125°C, R

IGBT

= V

= 0 V

= 1 MW

= 25°C

= 125°C

= 10 W I

= 25°C, unless otherwise specified)

TO-247 AD

= 60

±100

CES

300

min.

2.5

IXGH30N30

Characteristic Values

-55 ... +150

Maximum Ratings

1.13/10

typ.

±20

±30

150

300

260

300

120

200

max.

200

1.6

Nm/lb.in.

°C

G = Gate,

E = Emitter,

Features

Applications

Advantages

TO-247 AD

C25

International standard package

JEDEC TO-247 AD

High current handling capability

Newest generation HDMOS

process

MOS Gate turn-on

- drive simplicity

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

High power density

Suitable for surface mounting

Switching speed for high frequency

applications

Easy to mount with 1 screw,

(isolated mounting screw hole)

CES

CE(sat)

= 300 V

= 60

= 1.6 V

= 180 ns

C = Collector,

TAB = Collector

96542C (7/00)

C (TAB)

1 - 4

Related parts for IXGH30H30

IXGH30H30 Summary of contents

Page 1

TM HiPerFAST IGBT Preliminary data Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous GES V Transient GEM 25°C C25 ...

... T or CES J 1 125° 0 off 250 300 , CES 1.6 G 0.25 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 30N30 TO-247 AD (IXGH) Outline max 170 Dim. Millimeter ns Min ...

Page 3

Fig. 1. Output Characteristics Fig. 3. High Temperature Output Characteristics Fig. 5. Admittance Curves © 2000 IXYS All rights reserved IXGH 30N30 Fig. 2. Extended Output Characteristics Fig. 4. Temperature Dependence of V Fig. 6. Capacitance Curves CE(sat ...

Page 4

Related keywords

IXGH30H30 datasheet
IXGH30H30 data sheet
IXGH30H30 pdf datasheet
IXGH30H30 component
IXGH30H30 part
IXGH30H30 distributor
IXGH30H30 RoHS
IXGH30H30 datasheet download

IXGH30H30 IXYS Corporation, IXGH30H30 Datasheet

IXGH30H30

Related parts for IXGH30H30

IXGH30H30 Summary of contents

Page 1

Page 2

Page 3

Page 4

Related keywords