IXTA62N15PSN IXYS Corporation, IXTA62N15PSN Datasheet
IXTA62N15PSN
Manufacturer Part Number
IXTA62N15PSN
Description
Transistor Mosfet N-CH 150V 62A 3TO-263
Manufacturer
IXYS Corporation
Datasheet
1.IXTA62N15PSN.pdf
(5 pages)
PolarHT
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
stg
L
DGR
GSM
AR
D
JM
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
TM
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 10 Ω
DS
= 0
D25
(TO-3P / TO-220)
GS
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
Advanced Technical Information
IXTQ 62N15P
IXTA 62N15P
IXTP 62N15P
JM
,
150
Min. Typ.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
33
150
150
±20
150
350
175
300
260
1.0
5.5
62
50
30
10
4
3
±100
250
Max.
5.0
25
40
V/ns
mΩ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
g
g
J
Advantages
TO-220 (IXTP)
TO-263 (IXTA)
G = Gate
S = Source
Features
PolarHT
utilize proprietary designs and
process. US patent is pending.
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
G
D
TM
G
S
DMOS transistors
D
= 150
=
=
G
S
D = Drain
TAB = Drain
S
62
40 mΩ Ω Ω Ω Ω
DS99154A(05/04)
(TAB)
(TAB)
V
A
(TAB)
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IXTA62N15PSN Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 25°C to 175°C DSS 25°C to 175°C; R DGR J V GSM 25°C D25 25°C, pulse ...
Page 2
... TO-263 (IXTA) Outline Pins Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
Page 3
Fig. 1. Output Characteristics @ 10V 0 Volts D S Fig. 3. Output Characteristics @ 150 V = 10V ...
Page 4
Fig. 7. Input Adm ittance 120 105 Volts G S Fig. 9. Source Current vs. Source-To-Drain Voltage 180 150 120 150ºC ...
Page 5
Fig . ...