IXTH12N90SN IXYS Corporation, IXTH12N90SN Datasheet

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IXTH12N90SN

Manufacturer Part Number
IXTH12N90SN
Description
Transistor Mosfet N-CH 900V 12A 3TO-247 AD
Manufacturer
IXYS Corporation
Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
DM
GSS
D25
DSS
DSS
GS
GSM
J
JM
stg
DSS
GS(th)
DGR
D
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 3 mA
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
TO-204 = 18 g, TO-247 = 6 g
min.
900
Characteristic Values
IXTM 12N90
2
IXTH 12N90
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
900
900
300
150
300
20
30
12
48
max.
0.90
100
250
4.5
1
mA
nA
W
V
V
V
V
A
A
V
V
C
C
C
C
A
V
I
R
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
D25
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= 900 V
= 12 A
= 0.90
HDMOS
D = Drain,
TAB = Drain
TM
G
process
D (TAB)
91593E(5/96)
1 - 4

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IXTH12N90SN Summary of contents

Page 1

TM MegaMOS FET N-Channel Enhancement Mode Symbol Test Conditions 150 C DSS 150 C; R DGR J V Continuous GS V Transient GSM ...

Page 2

... I 30 DSS D D25 55 0.42 0.25 Characteristic Values ( unless otherwise specified) J min. typ 100 V 900 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 12N90 IXTM 12N90 TO-247 AD (IXTH) Outline max ...

Page 3

Fig. 1 Output Characteristics 25° Volts DS Fig vs. Drain Current DS(on) 1 25°C J 1.3 1.2 ...

Page 4

Fig.7 Gate Charge Characteristic Curve 450V 13A 10mA Gate Charge - nCoulombs Fig.9 Capacitance Curves 4500 C iss 4000 3500 3000 ...

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