L51ROPT1D1 Para Light Electronics Co., Ltd., L51ROPT1D1 Datasheet - Page 8

• Manufacturer Part Number: L51ROPT1D1
• Description: Receiver Module
• Manufacturer: Para Light Electronics Co., Ltd.

D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
L-51ROPT1XX
PARAMETER
L-51ROPT1D1 30
L-51ROPT1D2 30
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
L-51ROPT1C 30
CONDITION
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
Part No.
TEST
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN PEAK MAX
BREAKDOWN
COLLECTOR-
Ee=0mW/cm
I
BV
VOLTAGE
0.25 mm (0.01") unless otherwise specified.
C
EMITTER
Power Dissipation
L-51ROPT1XX
=100uA
CEO
P
(V)
D
10
2
(mw)
BREAKDOWN
COLLECTOR
5
5
5
Ee=0mW/cm
BV
I
EMITTER-
VOLTAGE
E
=100
ECO
(V)
uA
2
Reverse break down
5.0mm PHOTOTRANSISTOR
COLLECTOR
Ee=0mW/cm
CURRENT
V
I
CEO
DARK
E
=20V
V
voltage
(nA)
(BR)R
5
100
100
100
2
(V)
Ee=0.5mW/cm
COLLECTOR-
SATURATION
V
VOLTAGE
EMITTER
I
B-8
C
CE(s)
=2mA
(V)
0.4
0.4
0.4
2
Operating Temperature
5ºC For 3 Seconds
RISE/FALL
RL=1000
V
I
t
R
C
-35ºC to 85ºC
/t
CE
TIME
15/15
15/15
15/15
=1mA
F
=5V
(uS)
Range
Topr
1.8 2.4
1.7 2.2
1.7 2.2
Ee=0.1mW/cm
COLLECTOR
CURRENT
ON STATE
V
l
C
CE
(mA)
=5V
2
CAPACITANCE
Ee=0mW/cm
Storage Temperature
COLLECTOR
V
C
f=
CB
CB
-BASE
6.4
6.4
6.4
1MHZ
-35ºC to 85ºC
=3V
(pF)
Range
Tstg
2
400
900 940
800 870
WAVELENGTH
SENSITIVITY
SPECTRAL
(nm)
1050