DSS4240T Diodes, Inc., DSS4240T Datasheet - Page 2

• Manufacturer Part Number: DSS4240T
• Description: Low Vce Sat Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
DSS4240T
Document number: DS31623 Rev. 2 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
800
700
600
500
400
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
R
25
θJA
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
= 209°C/W
50
75
@T
A
100
= 25°C unless otherwise specified
°
125
150
V
V
V
Symbol
V
R
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
BE(ON)
I
www.diodes.com
C
h
CBO
EBO
f
FE
T
ob
2 of 4
Min
350
300
300
150
100
40
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Typ
30
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Max
0.75
100
100
100
180
180
320
200
1.1
2
50
70
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
MHz
Unit
mΩ
nA
mV
μA
nA
pF
⎯
V
V
V
V
V
4
I = 1mA
I = 5mA
I = 3mA
I = 2mA
B
I = 4mA
B
B
B
B
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
f = 100MHz
V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= 100μA
= 10mA
= 100μA
= 100mA, I
= 500mA, I
= 750mA, I
= 1A, I
= 2A, I
= 500mA, I
= 2A, I
= 30V, I
= 30V, I
= 4V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 10V, I
= 10V, f = 1MHz
6
Test Conditions
B
B
B
= 50mA
= 200mA
= 200mA
C
C
C
C
C
C
E
E
C
= 0
= 0.1A
= 0.5A
= 1A
= 2A
= 100mA
B
B
B
B
= 0
= 0, T
= 100mA,
DSS4240T
8
= 1mA
= 50mA
= 15mA
= 50mA
© Diodes Incorporated
November 2008
A
= 150°C
10