DSS4160V

Manufacturer Part NumberDSS4160V
DescriptionLow Vce Sat Npn Surface Mount Transistor
ManufacturerDiodes, Inc.
DSS4160V datasheet
 


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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DSS5160V)
Low Collector-Emitter Saturation Voltage, V
Surface Mount Package Suited for Automated Assembly
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Top View
Maximum Ratings
@T
= 25°C unless otherwise specified
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
= 25°C
A
Thermal Resistance, Junction to Ambient (Note 3) @ T
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4160V
Document number: DS31671 Rev. 2 - 2
LOW V
CE(SAT)
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Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
CE(SAT)
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.003 grams (approximate)
1, 2, 5, 6
3
4
Bottom View
Device Schematic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Symbol
P
D
= 25°C
R
θ JA
A
T
, T
J
STG
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www.diodes.com
DSS4160V
NPN SURFACE MOUNT TRANSISTOR
6
5
4
1
2
3
Pin Out Configuration
Value
Unit
80
V
60
V
5
V
1
A
2
A
300
mA
1
A
Value
Unit
600
mW
°C/W
208
°C
-55 to +150
March 2009
© Diodes Incorporated

DSS4160V Summary of contents

  • Page 1

    ... Device Schematic Symbol V CBO V CEO V EBO Symbol 25°C R θ STG www.diodes.com DSS4160V NPN SURFACE MOUNT TRANSISTOR Pin Out Configuration Value Unit 300 Value Unit 600 mW ° ...

  • Page 2

    ... DSS4160V Unit Test Condition ⎯ 100μ ⎯ 10mA ⎯ 100μ 60V μ ...

  • Page 3

    ... T = -55° 25° 85° 150° 1,000 10,000 0.1 Fig. 6 Typical Base-Emitter Saturation Voltage f = 1MHz 10 100 www.diodes.com DSS4160V 150° 85° 25° -55° 100 1,000 10,000 I , COLLECTOR CURRENT (mA) C vs. Collector Current I /I ...

  • Page 4

    ... Dim Min 0.15 B 1. 0.90 H 1.50 K 0. 0.10 All Dimensions www.diodes.com DSS4160V R ( θJA θ 178°C/W θ JA P(pk (t) θ Duty Cycle 100 1,000 10,000 Packaging 3000/Tape & Reel ...

  • Page 5

    ... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4160V Document number: DS31671 Rev Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DSS4160V 2.2 1.2 0.375 0.5 1.7 0.5 March 2009 © Diodes Incorporated ...