DAP202N3 Cystech Electonics Corp., DAP202N3 Datasheet - Page 2

• Manufacturer Part Number: DAP202N3
• Description: High-speed Diode
• Manufacturer: Cystech Electonics Corp.

Absolute Maximum Ratings
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics
Thermal Characteristics
Note 1: Device mounted on an FR-4 PCB.
DAP202N3
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
Total power dissipation(
Junction Temperature
Storage Temperature
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Rth,j-tp
Rth, j-a
Parameters
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Parameters
Note 1
CYStech Electronics Corp.
)
Vfr
V
I
Cd
trr
Symbol
R
F
@ Tj=25℃ unless otherwise specified
Parameter
@T
t=1ms
t=1s
A
V
when switched from I
I
at I
when switched from I
tr=20ns
=25℃
R
R
=10mA,R
I
I
I
I
V
V
V
V
=0V, f=1MHz
F
F
F
F
R
=1mA
=10mA
=50mA
=150mA
R
R
R
R
=1mA
=25V
=75V
=25V,Tj=150℃
=75V,Tj=150℃
Conditions
L
=100Ω, measured
Symbol
V
I
I
Ptot
T
V
FRM
FSM
RRM
T
I
stg
F
R
j
F
F
=10mA
=10mA to
Conditions
Note 1
Min
-65
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
CYStek Product Specification
Spec. No. : C303N3P
Issued Date : 2003.05.27
Revised Date
Page No. : 2/4
+150
Max
Typ.
215
125
450
250
150
0.5
85
75
Value
4
1
-
-
-
-
-
360
500
Max
1.25
1.75
715
855
30
30
50
1
1
2
4
Unit
mW
mA
mA
V
V
A
A
A
C
C
℃ /W
℃ /W
Unit
Unit
mV
mV
µA
µA
µA
nA
pF
ns
V
V
V