MM4150 Rectron Limited, MM4150 Datasheet

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MM4150

Manufacturer Part Number

MM4150

Description

1n4150 Mini-melf Signal Diode

Manufacturer

Rectron Limited

Datasheet

1.MM4150.pdf (1 pages)

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Download datasheet (70Kb)

RECTRON USA

Mechanical Data

Items

Package

Case

Lead/Finish

Chip

Absolute Maximum Ratings (Ta=25

Reverse Voltage (continous)

Power Dissipation at Tamb= 25

3.33mW/

Forward Current (DC)

Average Rectified Output Current

Repetitive Peak Forward Current

Junction Temperature

Storage Temperature Range

Electrical Characteristics (Ta=25

Minimum Breakdown Voltage @I

Peak Forward Surge Current

PW<1 sec

Maximum Forward Voltage IF = 200 mA

Maximum reverse Leakage Current

at VR = 50V

at V

Maximum Junction Capacitance

V

Reverse Recovery Time

I

R

Measured @I

Forward Recovery Time

Measured from I=0 to I

t

Measured @ V

Maximum Thermal Resistance

Junction to Ambient Air

F

r

=0.4ns, t

R

=10mA to 200mA, I

L

= 0, f= 1MHz

=100 ohms

R

= 50V, Tj = 150

o

p

C

=100ns, Duty Cycle < 1.0%

Material

mini MELF

Hermetically sealed glass

Double stud/Tin Plating

Glass Passivated

R

= 0.1xI

F

=1V

R

F

1N4150 mini-M.E.L.F. SIGNAL DIODE

o

=10mA to 200mA

C

F

=200mA

o

C

R

= 100uA

o

C)

o

C)

Symbol

Symbol

I

R

Fsurge

I

P

BV

V

FRM

T

V

C

trr

tfr

I

T

I

I

thJA

O

R

tot

F

R

S

F

j

j

Hermetically Sealed, Glass Silicon Diodes

Min

75

-

-

-

-

-

-

-

-

-65 to +200

-65 to +200

Value

500

300

200

600

50

0.100

0.35

Max

500

100

1.0

2.5

MM4150

10

4

-

o

UNIT

C/mW

www.rectron.com

mW

Unit

mA

mA

mA

mA

uA

pF

o

o

ns

ns

V

V

V

C

C

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