BAT42WS-V Vishay, BAT42WS-V Datasheet - Page 2

• Manufacturer Part Number: BAT42WS-V
• Description: Small Signal Schottky Diodes
• Manufacturer: Vishay

BAT42WS-V/BAT43WS-V
Vishay Semiconductors
Thermal Characteristics
T
Note:
1)
Electrical Characteristics
T
Note:
1)
Typical Characteristics
T
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2
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Rectification efficieny
amb
amb
amb
Valid provided that electrodes are kept at ambient temperature
Pulse test t
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
20981
Parameter
250
200
150
100
p
50
< 300 µs, t
0
Parameter
0
1)
1)
T
amb
p
- Ambient Temperature (°C)
/T < 0.02
50
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R
I
F
V
i
f = 45 MHz, V
L
R
I
V
R
R
= 10 mA, I
= 15 kΩ, C
100
= 1 mA, R
R
= 100 µA (pulsed)
= 25 V, T
Test condition
= 1 V, f = 1 MHz
I
F
I
I
I
V
F
F
I
F
F
= 200 mA
R
= 10 mA
= 50 mA
= 15 mA
= 2 mA
= 25 V
Test condition
R
j
L
L
= 100 °C
= 10 mA,
RF
150
= 100 Ω
= 300 pF,
= 2 V
BAT42WS-V
BAT42WS-V
BAT43WS-V
BAT43WS-V
Part
Symbol
R
T
18443
T
thJA
amb
T
stg
j
1000
0.01
Figure 2. Typical Reverse Characteristics
100
Symbol
0.1
10
V
1
C
V
V
V
V
V
(BR)
η
I
I
t
R
R
rr
0
F
F
F
F
F
D
v
V
F
125 °C
- Instantaneous Forward Voltage (mV)
200
Min.
- 55 to + 125
- 55 to + 150
260
30
80
400
650
Value
125
25 °C
- 40 °C
1)
600
Typ.
7
800
Document Number 81813
1000
Rev. 1.0, 11-Dec-07
Max.
1000
100
400
650
330
450
0.5
5
1200
K/W
Unit
°C
°C
°C
Unit
mV
mV
mV
mV
mV
µA
µA
pF
ns
%
V