GI850 Vishay, GI850 Datasheet

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GI850

Manufacturer Part Number
GI850
Description
Fast Switching Plastic Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 88630
Revision: 10-Apr-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature
T
V
I
J
I
F(AV)
FSM
RRM
V
t
I
max.
rr
R
F
DO-201AD
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
A
= 90 °C
A
Fast Switching Plastic Rectifier
= 25 °C unless otherwise noted)
50 V to 800 V
200 ns
150 °C
1.25 V
100 A
10 µA
3.0 A
SYMBOL
T
V
J
V
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
RSM
DC
STG
GI850
50
35
50
75
FEATURES
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and telecommunication.
(Note: These devices are not Q101 qualified.)
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
GI851
and WEEE 2002/96/EC
100
100
150
70
Vishay General Semiconductor
GI852
200
140
200
250
- 50 to + 150
100
3.0
GI854
400
280
400
450
GI850 thru GI858
GI856
600
420
600
650
GI858
800
560
800
880
www.vishay.com
UNIT
°C
V
V
V
V
A
A
1

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GI850 Summary of contents

Page 1

... V 50 100 RRM RMS V 50 100 150 RSM I F(AV) I FSM STG GI850 thru GI858 Vishay General Semiconductor GI852 GI854 GI856 GI858 200 400 600 800 140 280 420 560 200 400 600 800 250 450 650 880 3.0 100 - 150 www ...

Page 2

... GI850 thru GI858 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum 3.0 A instantaneous 9.4 A forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time dI/ A/µs, I Maximum reverse recovery time dI/ A/µs, I Typical junction 4 ...

Page 3

... PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 100 10 1.4 1.6 1 ° 100 DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. GI850 thru GI858 Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance www.vishay.com 100 3 ...

Page 4

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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