ESH3B Vishay, ESH3B Datasheet

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ESH3B

Manufacturer Part Number
ESH3B
Description
Surface Mount Ultrafast Plastic Rectifiers
Manufacturer
Vishay
Datasheet

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Part Number:
ESH3B
Manufacturer:
VISHAY
Quantity:
130 000
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ESH3B
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VISHAY/威世
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ESH3B-E3/57T
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Document Number: 84648
Revision: 04-Jul-07
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
T
V
I
j
F(AV)
RRM
V
max.
t
rr
F
DO-214AB (SMC)
Surface Mount Ultrafast Plastic Rectifiers
A
= 25 °C unless otherwise noted)
100 V, 150 V, 200 V
175 °C
0.90 V
25 ns
3 A
New Product
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RMM
RMS
DC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converter and
inverter for both consumer and automotive.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
of 260 °C
and WEEE 2002/96/EC
ESH3B
EHB
100
100
70
Vishay General Semiconductor
ESH3B, ESH3C & ESH3D
- 55 to + 175
ESH3C
EHC
150
105
150
125
3.0
ESH3D
EHD
200
140
200
www.vishay.com
UNIT
°C
V
V
V
A
A
1

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ESH3B Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 84648 Revision: 04-Jul-07 New Product ESH3B, ESH3C & ESH3D Vishay General Semiconductor FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • ...

Page 2

... ESH3B, ESH3C & ESH3D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical reverse recovery time Typical stored charge Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width duty cycle ...

Page 3

... °C j 0.10 0.01 0.2 0.4 0.6 0.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number: 84648 Revision: 04-Jul-07 New Product ESH3B, ESH3C & ESH3D Vishay General Semiconductor 1000 100 10 1 0.1 0.01 150 175 0 Figure 4. Typical Reverse Leakage Characteristics 1000 100 10 1 100 ...

Page 4

... ESH3B, ESH3C & ESH3D Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.126 (3.20) 0.114 (2.90) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) www.vishay.com 4 New Product DO-214AB (SMC) Cathode Band 0.246 (6.22) 0.220 (5.59) 0.126 MIN. (3.20 MIN.) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Mounting Pad Layout ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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