GS123 E-Tech Electronics LTD, GS123 Datasheet

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GS123

Manufacturer Part Number
GS123
Description
Npn Epitaxial Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet

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G
Description
The GS123 is designed for general purpose amplifier applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25 : : : :
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at Ta = 25 : : : :
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
VBE(on)
hFE
fT
Cob
G
S
S
Symbol
1
1
Parameter
2
2
3
3
Min.
150
150
25
20
5
-
-
-
-
N
N
P
Typ.
P
-
-
-
-
-
-
-
-
-
N
N
E
E
Symbol
VCBO
VCEO
VEBO
P
P
Tstg
PD
IC
Tj
I
I
T
T
Max.
A
A
400
300
10
1
1
-
-
-
-
X
X
I
I
A
A
L
L
T
T
Unit
MHz
R
mV
R
uA
pF
V
V
V
V
A
A
N
N
S
S
IC=10uA , IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=500mA, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
I
I
-55 ~ +150
S
S
Ratings
REF.
HE
A1
A2
+150
A
D
E
T
T
700
225
25
20
5
O
O
R
R
Min.
0.80
0.80
1.80
1.15
1.80
0
Millimeter
Max.
Test Conditions
1.10
0.10
1.00
2.20
1.35
2.40
REF.
ISSUED DATE :2005/02/25
REVISED DATE :
Q1
L1
L
b
c
e
Unit
mW
Min.
0.15
0.25
0.10
mA
V
V
V
0.15 BSC.
0.42 REF.
0.65 REF.
Millimeter
Max.
0.35
0.40
0.25
1/2

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GS123 Summary of contents

Page 1

... Description The GS123 is designed for general purpose amplifier applications. Package Dimensions Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Characteristics Symbol Min ...

Page 2

Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not ...

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