RSF014N03 ROHM Co. Ltd., RSF014N03 Datasheet - Page 3

• Manufacturer Part Number: RSF014N03
• Description: 4v Drive Nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
1000
Electrical characteristics curves
100
10
10000
1
0.01
1000
100
0.001
10
0.01
0.01
Fig.1 Typical Capacitance
0.1
10
Fig.4 Typical Transfer Characteristics
DRAIN-SOURCE VOLTAGE : V
1
0.5
Fig.7 Static Drain-Source
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
Ta= −25°C
Ta= −25°C
vs. Drain-Source Voltage
Ta=125°C
Ta=125°C
=10V
1.0
0.1
Ta=75°C
Ta=25°C
Ta=75°C
Ta=25°C
DRAIN CURRENT : I
Drain Current ( Ι )
On-State Resistance vs.
0.1
1.5
1
2.0
2.5
1
10
D
Ta=25°C
f=1MHz
V
3.0
GS
(A)
V
Pulsed
DS
GS
=0V
C
C
C
=10V
(V)
oss
3.5
rss
GS
iss
100
(V)
10
4.0
1000
100
10
0.01
1
10000
1000
1000
Fig.2 Switching Characteristics
900
800
700
600
500
400
300
200
100
100
10
0
0.01
0
Fig.5 Static Drain-Source
t
Ta=25°C
Pulsed
d (on)
Fig.8 Static Drain-Source
t
t
GATE SOURCE VOLTAGE : V
f
d (off)
I
D
t
r
=0.7A
DRAIN CURRENT : I
Ta= −25°C
On-State Resistance
vs. Gate-Source Voltage
Ta=125°C
2
Ta=75°C
Ta=25°C
DRAIN CURRENT : I
On-State Resistance vs.
Drain Current ( ΙΙ )
0.1
0.1
4
I
D
=1.4A
6
1
1
D
Ta=25°C
V
V
R
Pulsed
(A)
D
DD
GS
G
(A)
=10Ω
V
Pulsed
=15V
=10V
8
GS
GS
=4.5V
(V)
10
10
10
0.01
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
0.0
0
Fig.3 Dynamic Input Characteristics
10000
1000
Ta=25°C
V
I
R
Pulsed
Fig.6 Source Current vs.
D
100
SOURCE-DRAIN VOLTAGE : V
10
DD
G
=1.4A
0.01
TOTAL GATE CHARGE : Qg (nC)
=10Ω
=15V
Fig.9 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Source-Drain Voltage
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
DRAIN CURRENT : I
0.5
1
On-State Resistance vs.
Drain Current ( ΙΙΙ )
0.1
Rev.B
RSF014N03
1.0
2
1
V
Pulsed
D
GS
SD
(A)
=0V
V
Pulsed
(V)
GS
1.5
=4V
3
3/4
10