M1F80 Shindengen Electric Manufacturing Co.,Ltd, M1F80 Datasheet
M1F80
Manufacturer Part Number
M1F80
Description
Recti?er Diode
Manufacturer
Shindengen Electric Manufacturing Co.,Ltd
Datasheet
1.M1F80.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M1F80
Manufacturer:
VISHAY/威世
Quantity:
20 000
188
Rectifier Diode
• 小型 SMD
• 耐湿性に優れ高信頼性
• Small SMD
• High-Reliability
■定格表 RATINGS
Feature
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
出力電流
Average Rectified Forward Current
せん頭サージ順電流
Peak Surge Forward Current
順電圧
Forward Voltage
逆電流
Reverse Current
熱抵抗
Thermal Resistance
特 長
（J534）
項 目
800V 1A
M1F □
Item
Symbol
記号
T
V
I
θjl
θja
V
FSM
T
I
I
stg
RM
R
O
F
j
Surface Mounting Device Single Diode
Conditions
50Hz 正弦波，抵抗負荷，Ta = 25℃
50Hz sine wave,
Resistance load, Ta = 25℃
50Hz 正弦波，非繰り返し１サイクルせん頭値，Tj = 25℃
50Hz sine wave , Non-repetitive 1cycle peak value, Tj = 25℃
I
V
接合部・リード間
Junction to Lead
接合部・周囲間
Junction to Ambient
F =
R =
条 件
1A,
面実装デバイス 単体型
V
RM
,
パルス測定
Pulse measurement
パルス測定
Pulse measurement
■外観図 OUTLINE
外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
Package：M1F
アルミナ基板実装
On alumina substrate
プリント基板実装
On glass-epoxy substrate
アルミナ基板実装
On alumina substrate
プリント基板実装
On glass-epoxy substrate
Type No.
品 名
M1F60
600
−55∼150
MAX
MAX
MAX
MAX
MAX
0.64
150
1.0
25
108
186
1.1
10
20
Weight : 0.027g （ typ.）
M1F80
800
Unit : mm
℃/W
単位
Unit
μA
℃
℃
V
V
A
A
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M1F80 Summary of contents
Page 1
... On alumina substrate Junction to Ambient プリント基板実装 On glass-epoxy substrate Unit : mm Weight : 0.027g （ typ.） 品 名 単位 M1F60 M1F80 Type No. Unit −55∼150 ℃ 150 ℃ 600 800 V 1 ...
Page 2
Small SMD ■特性図 CHARACTERISTIC DIAGRAMS ＊ Sine wave は 50Hz で測定しています。 ＊ ＊半導体製品の特性は一般的にバラツキを持っております。 Typical は統計的な実力を表しています。 ＊ （J534） M1F □ 189 ...