2N5401C Korea Electronics (KEC GROUP), 2N5401C Datasheet
2N5401C
Manufacturer Part Number
2N5401C
Description
Epitaxial Planar Pnp Transistor General Purpose, High Voltage
Manufacturer
Korea Electronics (KEC GROUP)
Datasheet
1.2N5401C.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5401CY
Manufacturer:
FAIRCHILD
Quantity:
880
Company:
Part Number:
2N5401CYTA
Manufacturer:
FAIRCHILD
Quantity:
23 562
1997. 5. 13
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
High Collector Breakdwon Voltage
Low Leakage Current.
Low Saturation Voltage
Low Noise : NF=8dB (Max.)
: V
: I
: V
CBO
CBO
CE(sat)
CHARACTERISTIC
(Ta=25 )
(Tc=25 )
=-50nA(Max.) @V
=-160V, V
=-0.5V(Max.) @I
CEO
=-150V
Revision No : 0
CB
C
SEMICONDUCTOR
=-120V
=-50mA, I
TECHNICAL DATA
SYMBOL
B
=-5mA
V
V
V
T
P
P
I
I
T
CBO
CEO
EBO
C
B
stg
C
C
j
-55 150
RATING
-160
-150
-600
-100
625
150
1.5
-5
UNIT
mW
mA
mA
W
V
V
V
EPITAXIAL PLANAR PNP TRANSISTOR
K
D
F
1
B
2
3
H
G
F
E
2N5401C
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
C
N
DIM
M
A
B
C
D
E
F
G
H
K
L
N
J
MILLIMETERS
14.00 0.50
4.70 MAX
4.80 MAX
3.70 MAX
0.55 MAX
0.45 MAX
0.45
1.00
1.27
0.85
0.45
2.30
1.00
+ _
1/2
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2N5401C Summary of contents
Page 1
... UNIT V -160 V CBO V -150 V CEO EBO I -600 -100 625 1 150 j T -55 150 stg 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR DIM MILLIMETERS A 4.70 MAX 4.80 MAX G C 3.70 MAX 14.00 0.50 K 0.55 MAX 0.45 MAX ...
Page 2
... Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1997 Revision 2N5401C SYMBOL TEST CONDITION V =-120V CBO V =-120V, I =0, Ta=100 ...