Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
Notes:
DMN2004TK
Document number: DS30936 Rev. 3 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD PROTECTED TO 2kV
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Steady
State
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
TOP VIEW
T
T
Symbol
R
A
A
BV
V
DS (ON)
I
I
C
= 25°C
= 85°C
|Y
V
C
C
GS(th)
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
GSS
DSS
oss
SD
rss
DSS
iss
fs
|
www.diodes.com
SOT-523
Min
1 of 4
200
0.5
0.5
20
⎯
⎯
⎯
⎯
⎯
⎯
Mechanical Data
•
•
•
•
•
•
•
•
Symbol
Symbol
T
J,
V
V
R
I
P
DSS
GSS
I
DM
T
θ JA
Typ
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D
0.4
0.5
0.7
D
EQUIVALENT CIRCUIT
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
STG
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
Gate
Gate
Protection
Diode
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
⎯
⎯
1
Drain
Source
Unit
μA
μA
ms
pF
pF
pF
-55 to +150
Ω
V
V
V
Value
Value
540
390
150
833
1.5
20
±8
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
G
TOP VIEW
= 16V, V
= V
= 4.5V, I
= 2.5V, I
=10V, I
= 16V, V
= 0V, I
= ±4.5V, V
= 1.8V, I
= 0V, I
D
GS
, I
Test Condition
D
S
D
D
D
D
= 10μA
D
= 115mA
GS
GS
= 0.2A
S
= 250μA
= 540mA
= 500mA
= 350mA
DS
DMN2004TK
= 0V
= 0V
= 0V
© Diodes Incorporated
Units
Units
°C/W
mW
mA
°C
V
V
A
May 2008