GSMBT5551 E-Tech Electronics LTD, GSMBT5551 Datasheet
GSMBT5551
Manufacturer Part Number
GSMBT5551
Description
Npn Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GSMBT5551.pdf
(2 pages)
G
Description
The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage.
Features
Package Dimensions
Absolute Maximum Ratings at Ta = 25 : : : :
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Electrical Characteristics (Ta = 25 )
BV
BV
BV
I
I
*V
*V
*V
*V
*h
*h
*h
fT
Cob
GSMBT5551
G
CBO
EBO
&Complementary to GSMBT5401
&
FE
FE
FE
CE(sat)
CE(sat)
BE(sat)
BE(sat)
High Collector-Emitter Breakdown Voltage (BV
CBO
CEO
EBO
1
2
3
S
S
Symbol
M
1
2
1
2
M
Parameter
B
B
T
T
5
5
Min.
180
160
100
80
80
30
6
5
5
-
-
-
-
-
-
-
5
5
1
1
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N
N
P
P
V
V
V
Tstg
P
Symbol
CBO
CEO
EBO
Tj
I
N
N
C
D
Max.
E
E
150
200
250
300
50
50
1
1
6
-
-
-
-
-
P
P
I
I
CEO
T
T
A
A
X
=160V @ IC=1mA)
X
I
I
MHz
Unit
A
A
mV
mV
nA
nA
pF
V
V
V
V
V
L
L
P
P
L
L
I
I
I
V
V
I
I
I
I
V
V
V
V
V
C
C
E
C
C
C
C
A
A
-55~+150
CB
EB
CE
CE
CE
CE
CB
Ratings
=10uA ,I
=100uA , I
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
REF.
* Pulse Test: Pulse Width
N
HE
N
A1
A2
+150
A
D
E
=4V, I
180
160
600
225
=120V, I
=5V, I
=5V, I
=5V, I
=10V, I
=10V, I
6
A
A
R
R
C
B
C
C
C
C
Min.
0.80
0.80
1.80
1.15
1.80
=0
=0
B
B
B
B
=1mA
=10mA
=50mA
C
E
T
T
=0
0
E
=1mA
=5mA
=1mA
=5mA
=0, f=1MHz
E
=10mA, f=100MHz
Millimeter
=0
R
=0
R
A
A
Test Conditions
N
N
Max.
1.10
0.10
1.00
2.20
1.35
2.40
S
S
I
I
S
S
T
T
REF.
ISSUED DATE :2005/08/31
REVISED DATE :
Q1
L1
O
O
L
b
c
e
380 s, Duty Cycle
R
R
mW
mA
Min.
0.15
0.25
0.10
V
V
V
0.15 BSC.
0.42 REF.
0.65 REF.
Millimeter
Unit
Page: 1/2
Max.
0.35
0.40
0.25
2%
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GSMBT5551 Summary of contents
Page 1
... Description The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. Features & High Collector-Emitter Breakdown Voltage (BV &Complementary to GSMBT5401 Package Dimensions Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage ...
Page 2
... Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSMBT5551 ISSUED DATE :2005/08/31 REVISED DATE : Page: 2/2 ...