SI7405BDN Vishay, SI7405BDN Datasheet

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SI7405BDN

Manufacturer Part Number
SI7405BDN
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
IDT
Quantity:
686
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7405BDN-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 69941
S-80431-Rev. A, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
Ordering Information:
(V)
8
3.30 mm
D
0.013 at V
0.017 at V
0.024 at V
7
D
h
R
ttp://www.vishay.com/ppg?73257).. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
6
DS(on)
D
PowerPAK 1212-8
Si7405BDN-T1-E3 (Lead (Pb)-free)
GS
GS
GS
Bottom View
5
D
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
= 150 °C)
b, f
1
S
P-Channel 12-V (D-S) MOSFET
2
S
3
I
- 16
- 16
- 16
S
D
3.30 mm
(A)
4
a
a
a
G
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
46 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Load Switch, PA Switch and Power Switch
Symbol
Symbol
T
R
R
for Portable Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
G
2.9
28
P-Channel MOSFET
- 55 to 150
- 13.5
- 11
3.6
2.3
Limit
- 3
- 16
- 16
- 16
- 12
- 40
260
± 8
33
21
b, c
b, c
b, c
S
D
b, c
a
a
b, c
a
Maximum
3.8
35
Vishay Siliconix
Si7405BDN
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7405BDN Summary of contents

Page 1

... Bottom View Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7405BDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 2.0 2.5 3.0 6000 5000 4000 3000 2000 1000 Si7405BDN Vishay Siliconix 125 ° ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss ...

Page 4

... Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.04 0. °C J 0.02 0.01 0.8 1.0 1 100 125 ...

Page 5

... Document Number: 69941 S-80431-Rev. A, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7405BDN Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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