SI7431DP Vishay, SI7431DP Datasheet - Page 3

• Manufacturer Part Number: SI7431DP
• Description: P-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 73116
S-51565-Rev. B, 31-Oct-05
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
0.1
40
10
8
6
4
2
0
1
0.00
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
15
= 3.8 A
V
On-Resistance vs. Drain Current
0.2
T
10
V
GS
= 10 V
J
SD
= 150
Q
= 6 V
g
- Source-to-Drain Voltage (V)
I
D
30
- Total Gate Charge (nC)
0.4
˚
C
- Drain Current (A)
20
Gate Charge
45
0.6
30
60
0.8
T
V
J
GS
= 25
40
75
= 10 V
1.0
˚
C
New Product
1.2
50
90
6000
5000
4000
3000
2000
1000
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2.2
1.9
1.6
1.3
1.0
0.7
0.4
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
rss
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
C
= 3.8 A
V
30
oss
2
DS
= 10 V
T
V
J
0
GS
- Drain-to-Source Voltage (V)
- Junction Temperature (
- Gate-to-Source Voltage (V)
25
Capacitance
60
4
C
50
iss
Vishay Siliconix
I
D
90
= 3.8 A
6
75
Si7431DP
˚
www.vishay.com
100
C)
120
8
125
150
150
10
3