TSHG620 Vishay, TSHG620 Datasheet
TSHG620
Related parts for TSHG620
TSHG620 Summary of contents
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... High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines high speed with high radiant power at wavelength of 850 nm. Features • High modulation bandwidth • ...
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... TSHG6200 Vishay Semiconductors Parameter Test condition Reverse Current Junction capacitance MHz Radiant Intensity I = 100 mA Radiant Power I = 100 mA Temp. Coefficient 100 Angle of Half Intensity Peak Wavelength I = 100 mA F Spectral Bandwidth ...
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... I – Forward Current ( mA ) 16971 F Figure 6. Radiant Power vs. Forward Current 1.25 1.0 0.75 0.5 0.25 0 900 800 850 l – Wavelength ( nm ) 16972 Figure 7. Relative Radiant Power vs. Wavelength Document Number 81078 Rev. 1.3, 08-Mar-05 TSHG6200 Vishay Semiconductors 0° ° ° 1.0 0.9 0.8 0.7 0.6 0.6 0.4 0.2 0 0.2 0.4 15989 Figure 8. Relative Radiant Intensity vs. Angular Displacement 30° ...
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... TSHG6200 Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 VISHAY 95 10917 Document Number 81078 Rev. 1.3, 08-Mar-05 ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81078 Rev. 1.3, 08-Mar-05 and may do so without further notice. TSHG6200 Vishay Semiconductors www.vishay.com 5 ...