PZT651 ON Semiconductor, PZT651 Datasheet

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PZT651

Manufacturer Part Number
PZT651
Description
Npn Transistor Silicon Planar Epitaxial Transistor
Manufacturer
ON Semiconductor
Datasheet

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PZT651T1
NPN Silicon Planar
Epitaxial Transistor
industrial and consumer applications. The device is housed in the
SOT-223 package which is designed for medium power surface
mount applications.
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR- 4 glass epoxy printed circuit board using minimum
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
Storage Temperature Range
Junction Temperature
Thermal Resistance from
Maximum Temperature for Soldering
This NPN Silicon Epitaxial transistor is designed for use in
SOT-223 package ensures level mounting, resulting in improved
High Current: 2.0 A
The SOT-223 package can be soldered using wave or reflow
Available in 12 mm Tape and Reel
PNP Complement is PZT751T1
Pb-Free Package is Available
recommended footprint.
(Note 1)
Derate above 25°C
Junction-to-Ambient in Free Air
Purposes
Time in Solder Bath
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
Characteristic
Rating
(T
C
Preferred Device
= 25°C unless otherwise noted)
A
= 25°C
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
T
T
I
qJA
stg
C
D
J
L
-65 to 150
Value
Max
150
156
260
5.0
2.0
0.8
6.4
60
80
10
1
mW/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Sec
°C
°C
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
SOT-223 PACKAGE HIGH CURRENT
1
2
(Note: Microdot may be in either location)
3
NPN SILICON TRANSISTOR
ORDERING INFORMATION
4
A
Y
WW
G
SURFACE MOUNT
http://onsemi.com
CASE 318E-04
BASE
TO-261AA
1
STYLE 1
= Assembly Location
= Year
= Work Week
= Pb-Free Package
COLLECTOR 2,4
EMITTER 3
Publication Order Number:
1
MARKING
DIAGRAM
PZT651T1/D
651 G
AYW
G

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PZT651 Summary of contents

Page 1

... High Current: 2.0 A • The SOT-223 package can be soldered using wave or reflow • Available Tape and Reel Use PZT651T1 to order the 7 inch/1000 unit reel Use PZT651T3 to order the 13 inch/4000 unit reel • PNP Complement is PZT751T1 • Pb-Free Package is Available MAXIMUM RATINGS (T = 25° ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0% ORDERING INFORMATION Device PZT651T1 PZT651T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PZT651T1 (T = 25°C unless otherwise noted) A Package SOT-223 SOT-223 (Pb-Free) http://onsemi ...

Page 3

... COLLECTOR CURRENT (mA) C Figure 3. On Voltages NPN 1.0 0.9 0.8 0.7 0.6 0.5 0 100 500 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5 BASE CURRENT (mA) B Figure 5. Collector Saturation Region PZT651T1 250 T = 125°C J 225 200 175 25°C 150 125 100 -55 ° -10 -20 Figure 2. Typical DC Current Gain -2.0 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0 ...

Page 4

... COLLECTOR 3. EMITTER 4. COLLECTOR mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZT651T1/D MAX 10° ...

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