PZT751 ON Semiconductor, PZT751 Datasheet

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PZT751

Manufacturer Part Number
PZT751
Description
Pnp Transistor High Current
Manufacturer
ON Semiconductor
Datasheet

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PZT751T1
PNP Silicon Planar
Epitaxial Transistor
industrial and consumer applications. The device is housed in the
SOT-223 package which is designed for medium power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR- 4 glass epoxy printed circuit board using minimum
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
Derate above 25°C
Storage Temperature Range
Junction Temperature
Thermal Resistance from Junction-to-‐
Ambient in Free Air
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
This PNP Silicon Epitaxial transistor is designed for use in
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
High Current: 2.0 A
The SOT-223 Package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved
NPN Complement is PZT651T1
Pb-Free Package is Available
recommended footprint.
Rating
Rating
(T
C
A
Preferred Device
= 25°C unless otherwise noted)
= 25°C
(1)
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
T
T
I
qJA
stg
C
D
J
L
-65 to 150
Value
Value
150
156
260
5.0
2.0
0.8
6.4
60
80
10
1
mW/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Sec
°C
°C
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
PZT751T1
PZT751T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
PNP SILICON TRANSISTOR
Device
(Note: Microdot may be in either location)
A
Y
W
G
SOT-223 PACKAGE
ORDERING INFORMATION
SURFACE MOUNT
HIGH CURRENT
BASE
CASE 318E
http://onsemi.com
TO-261AA
STYLE 1
COLLECTOR 2, 4
SOT-223
(Pb-Free)
Package
SOT-223
= Assembly Location
= Year
= Work Week
= Pb-Free Package
1
EMITTER 3
Publication Order Number:
1
1000 / Tape & Reel
1000 / Tape & Reel
MARKING
DIAGRAM
ZT751G
AYW
Shipping
PZT751T1/D
G

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PZT751 Summary of contents

Page 1

... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SOT-223 1000 / Tape & Reel SOT-223 1000 / Tape & Reel (Pb-Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: PZT751T1/D ...

Page 2

... Base-Emitter Voltages (I = 1.0 Adc 2.0 Vdc Base-Emitter Saturation Voltage (I = 1.0 Adc 100 mAdc Current-Gain-Bandwidth ( mAdc 5.0 Vdc 100 MHz Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. PZT751T1 = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO CE(sat) V BE(on) V BE(sat) http://onsemi ...

Page 3

... COLLECTOR CURRENT (mA) C Figure 3. On Voltages NPN 1.0 0.9 0.8 0.7 0.6 0.5 0 100 500 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5 BASE CURRENT (mA) B Figure 5. Collector Saturation Region PZT751T1 250 T = 125°C J 225 200 175 25°C 150 125 100 -55 ° -10 -20 Figure 2. Typical DC Current Gain -2.0 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0 ...

Page 4

... COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZT751T1/D MAX 10° ...

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