NSTB1002DXV5 ON Semiconductor, NSTB1002DXV5 Datasheet

NSTB1002DXV5

Manufacturer Part Number

NSTB1002DXV5

Description

Dual Common Base Collector Bias Resistor Transistors

Manufacturer

ON Semiconductor

Datasheet

1.NSTB1002DXV5.pdf (6 pages)

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Bonase Electronics (HK) Co., Limited

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NSTB1002DXV5T1G,

NSTB1002DXV5T5G

Dual Common

Base−Collector Bias

Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSTB1002DXV5T1G

series, two complementary devices are housed in the SOT−553

package which is ideal for low power surface mount applications

where board space is at a premium.

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

and Q

January, 2006 − Rev. 0

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Thermal Resistance −

Total Device Dissipation

Thermal Resistance −

Junction and Storage Temperature

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Available in 8 mm, 7 inch Tape and Reel

These are Pb−Free Devices

Junction-to-Ambient

, − minus sign for Q

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

Derate above 25°C

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Preferred Devices

= 25°C

Symbol

, T

CBO

CEO

qJA

stg

357 (Note 1)

350 (Note 1)

500 (Note 1)

250 (Note 1)

−55 to +150

−200

2.9 (Note 1)

4.0 (Note 1)

−40

Value

Max

100

mW/°C

mAdc

°C/W

Unit

Vdc

°C

Preferred devices are recommended choices for future use

and best overall value.

NSTB1002DXV5T1G SOT−553

NSTB1002DXV5T5G SOT−553

Device

U9 = Specific Device Code

M = Date Code

(Note: Microdot may be in either location)

ORDERING INFORMATION

= Pb−Free Package

MARKING DIAGRAM

http://onsemi.com

CASE 463B

SOT−553

(Pb−Free)

U9 MG

Package

Publication Order Number:

NSTB1002DXV5/D

4000/Tape & Reel

8000/Tape & Reel

4 mm pitch

2 mm pitch

Shipping

Related parts for NSTB1002DXV5

NSTB1002DXV5 Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the NSTB1002DXV5T1G series, two complementary devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space premium. • ...

Page 2

... NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (I = −0.1 mAdc −1.0 Vdc −1.0 mAdc −1.0 Vdc) ...

Page 3

... NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (T Characteristic ON CHARACTERISTICS Collector-Base Breakdown Voltage = 10 mA Collector-Emitter Breakdown Voltage (I = 2.0 mA Current Gain ( 5.0 mA Collector−Emitter Saturation Voltage ( mA 0.3 mA Output Voltage ( 1.0 kW Output Voltage (off 5 ...

Page 4

... NSTB1002DXV5T1G, NSTB1002DXV5T5G TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1 +125°C J +25°C −55 °C 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 2. DC Current Gain http://onsemi.com 1 100 200 ...

Page 5

... NSTB1002DXV5T1G, NSTB1002DXV5T5G TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 5. Output Capacitance 100 0.1 0 Figure 7. Input Voltage versus Output Current 1000 25° ...

Page 6

... NSTB1002DXV5T1G, NSTB1002DXV5T5G D −X− −Y− 0.08 (0.003) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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