1N646 Microsemi Corporation, 1N646 Datasheet

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1N646

Manufacturer Part Number
1N646
Description
Silicon Switching Diode Do-35 Glass Package
Manufacturer
Microsemi Corporation
Datasheet

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Type
1N645,-1
1N646,-1
1N647,-1
1N648,-1
1N649,-1
Silicon Rectifier Diodes
Use Advantages
Features
Absolute Maximum Ratings
Detail Specifications
Power Dissipation at 3/8" from the body, T
Average Forward Rectified Current at T
Operating and Storage Temperature Range
Thermal Impedance
Used as a general purpose rectifier in power supplies, or for clipping and
High performance alternative to small signal diodes where space does not
May be used in hostile environments where hermeticity and reliability are
"S" level screening capability to Source Control Drawings.
Note 1: Surge Current @T
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
steering applications.
permit use of power rectifiers.
Six Sigma quality
Humidity proof glass
Metallurgically bonded
Thermally matched system
No thermal fatigue
High surge capability
Sigma Bond™ plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Reverse
Voltage
Volts
(V
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
225
300
400
500
600
R
)
Breakdown
@ 100µA
Voltage
(MIN.)
Volts
(B
275
360
480
600
720
A
V
= +25° C to +150° C, for 1 Second
)
Average Rectified Current
Amps
25° C
_______________
(I
0.4
0.4
0.4
0.4
0.4
O
)
Maximum
L
1N645-1 to 649-1
= 75
L
= 75
1N645 to 649
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Amps
150° C (MIN.)
o
0.15
0.15
0.15
0.15
0.15
(I
C
o
O
C
)
or
(V
F
) @ I
2 5 .4 m m
Forward
Voltage
(M in .)
Volts
1 .0 "
Drop
F
= 400mA
(MAX.) 25° C
1.0
1.0
1.0
1.0
1.0
0.12 0-.200 "
Symbol
3.05 -5 .08-
L e n g th
Reverse Leakage Current
T
D O -3 5 G la ss P a ck a g e
O&S
P
I
Z
DO-35 Glass Package
AV
_______________
qJX
µA
0.2
0.2
0.2
0.2
0.2
tot
mm
Maximum
(I
R
) @ V
0.458-0.558 mm
R
100° C
-65 to 175
0.018-0.022"
µA
Lead Dia.
15
15
20
20
25
600
Value
400
35
1.53-2.28 mm
0.06 -0 .09"
(NOTE 1)
D ia .
Maximum
Current Capacitance
Amps
Surge
(I
FSM
3
3
3
3
3
)
mAmps
mWatts
o
C/W
Unit
o
C
Junction
Typical
@ -12V
(C
pF
9
9
9
9
9
O
)

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1N646 Summary of contents

Page 1

... Voltage (MIN.) @ 100µ Type Volts Volts 1N645,-1 225 275 1N646,-1 300 360 1N647,-1 400 480 1N648,-1 500 600 1N649,-1 600 720 Note 1: Surge Current @T = +25° +150° C, for 1 Second A For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial. ...

Page 2

Silicon Rectifier Diodes DO-35 DERATING (175 C Tj 500 400 300 200 100 1N645-1 thru 1N649 100 ...

Page 3

Silicon Rectifier Diodes Silicon Rectifier Diodes 1N645-1 thru 1N649 ...

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