RB706D-40 ROHM Co. Ltd., RB706D-40 Datasheet

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RB706D-40

Manufacturer Part Number
RB706D-40
Description
Schottky Barrier Diode
Manufacturer
ROHM Co. Ltd.
Datasheet

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Diodes
Schottky barrier diode
RB706D-40
Low current rectification
1) Small mold type. (SMD3)
2) Low I
3) High reliability.
Silicon epitaxial planar
Forward voltage
Reverse current
Capacitance between terminals
R
R
Ave
F
Junc
St
(
*1) Rating of per diode : Io/2
Applications
Features
Construction
orward current surge peak (60Hz・1cyc) (*1)
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
everse voltage (repetitive peak)
everse voltage (DC)
orage temperature
rage rectified forward current (*1)
tion temperature
R
Parameter
Parameter
External dimensions (Unit : mm)
Taping specifications(Unit : mm)
3.2±0.1
0.4
4.0±0.1
Symbol
 -0.05
Symbol
+0.1
(2)
0.95
V
Ct1
Tstg
I
V
I
V
R
FSM
Io
Tj
F
2.9±0.2
RM
1.9±0.2
1
各リードとも
Each lead has same dimension
R
1
同寸法
(3)
0.95
2.0±0.05
Min.
(1)
-
-
-
-40 to +125
4.0±0.1
JEDEC :S0T-346
JEITA : SC-59
ROHM : SMD3
Limits
200
125
Typ.
2.0
45
40
30
0.15
-
-
week code
1.1±0.2
φ1.5±0.1
      0
0.8±0.1
+0.1
-0.06
0.01
Max.
0.37
0~0.1
1
-
φ1.05MIN
Unit
Unit
µA
mA
mA
pF
V
V
V
Land size figure (Unit : mm)
Structure
I
V
V
F
=1mA
R
R
=10V
=1V , f=1MHz
0.8MIN.
0.95
Rev.B
RB706D-40
1.9
Conditions
0.3±0.1
1.35±0.1
1/3

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RB706D-40 Summary of contents

Page 1

... 200 FSM 125 Tj -40 to +125 Tstg Symbol Min. Typ. Max 0. Ct1 - 2.0 - RB706D-40 Land size figure (Unit : mm) 1.9 0.95 0.8MIN. Structure 0.3±0.1 φ1.05MIN 1.35±0.1 Unit ℃ ℃ Unit Conditions V I =1mA F µA V =10V R V =1V , f=1MHz pF R Rev.B ...

Page 2

... IR DISPERSION MAP 20 Ifsm 15 8.3ms 8.3ms 1cyc 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.04 D=1/2 0.03 Sin(θ=180) 0.02 DC 0.01 0.00 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS RB706D-40 10 f=1MHz 1 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Ta=25℃ 9 f=1MHz 8 VR=0V n=10pcs AVE:2.52pF 0 Ct DISPERSION MAP 10 9 Ifsm 8 ...

Page 3

... VR=20V 0. Tj=125℃ D=1/2 0.04 0.02 Sin(θ=180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 0.1 Per chip D=t/T VR=20V 0. Tj=125℃ D=1/2 0.04 0.02 Sin(θ=180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) RB706D- 125 Rev.B 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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