RB481Y ROHM Co. Ltd., RB481Y Datasheet
RB481Y
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RB481Y Summary of contents
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... Symbol FSM Tj -40 to +125 Tstg Min. Typ. Max. Unit - - µA RB481Y Land size figure (Unit : mm) 0.5 1.0 0～0.1 EMD4 Structure 0.3±0.1 φ0.8±0.1 0.65±0.1 Limits Unit 30 V 100 ℃ 125 ℃ Conditions I =1mA F I =10mA F I =100mA ...
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... NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.3 Per chip 0.2 D=1/2 Sin(θ＝180 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS RB481Y 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 16 Ta=25℃ f=1MHz VR=0V 15 n=10pcs 14 AVE:14.33pF DISPERSION MAP 10 Ifsm t 5 ...
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... VR t 0.4 D=t/T DC VR=15V Tj=125℃ T 0.3 D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curve 0 Per diode 0V t 0.4 D=t/T DC VR=15V Tj=125℃ T 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 125 100 CASE TEMPARATURE：Tc(℃) Derating Curve RB481Y Io VR 125 Rev.C 3/3 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...