IRF7503

Manufacturer Part NumberIRF7503
DescriptionHexfet Power Mosfet
ManufacturerInternational Rectifier Corp.
IRF7503 datasheet
 


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Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
S 1
2
G 1
3
S 2
4
G 2
T o p V iew
@ 10V
GS
@ 10V
GS
Typ.
–––
PD - 9.1266G
IRF7503
®
HEXFET
Power MOSFET
8
D 1
V
= 30V
DSS
7
D 1
6
D 2
5
R
= 0.135
D 2
DS(on)
Micro8
Max.
Units
2.4
1.9
A
14
1.25
W
10
mW/°C
± 20
V
5.0
V/ns
-55 to + 150
°C
Max.
Units
100
°C/W
8/25/97

IRF7503 Summary of contents

  • Page 1

    ... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . iew @ 10V GS @ 10V GS Typ. ––– 9.1266G IRF7503 ® HEXFET Power MOSFET 30V DSS 0.135 D 2 DS(on) Micro8 Max ...

  • Page 2

    ... IRF7503 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 3 IRF7503 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3. µ LSE W IDTH 0° ...

  • Page 4

    ... IRF7503 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150 ° 5°C ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7503 D.U. µ d(on) r d(off ...

  • Page 6

    ... IRF7503 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Driver Gate Drive Period P ...

  • Page 7

    ... ( IRF7503 ...

  • Page 8

    ... IRF7503 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & LLIN G DIMEN SIO N : MILLIME T ER. ...