SI2325DS Vishay, SI2325DS Datasheet

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SI2325DS

Manufacturer Part Number
SI2325DS
Description
P-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
b.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single-Pluse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
i
DS
−150
150
(V)
J
ti
t A bi
1.3 @ V
1.2 @ V
r
DS(on)
GS
J
J
a, b
a, b
GS
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
= −6.0 V
= −10 V
(W)
a, b
a, b
P-Channel 150-V (D-S) MOSFET
a, b
I
−0.69
−0.66
D
(A)
A
Steady State
Steady State
L = 1 0 mH
L = 1.0 mH
T
T
T
T
t v 5 sec
= 25_C UNLESS OTHERWISE NOTED)
A
A
A
A
G
S
Q
= 25_C
= 70_C
= 25_C
= 70_C
g
New Product
7 7
7.7
(Typ)
1
2
Si2325DS (D5)*
*Marking Code
(SOT-23)
Top View
TO-236
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
I
I
I
AS
thJA
thJF
3
DS
GS
D
D
AS
S
D
D
stg
D
FEATURES
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Ordering Information: Si2325DS -T1—E3
Supplies
Typical
5 sec
−0.69
−0.55
−1.0
1.25
120
0.8
75
40
−55 to 150
−150
$20
−1.6
1.01
4.5
Steady State
Vishay Siliconix
Maximum
−0.53
−0.43
−0.6
0.75
0.48
100
166
50
Si2325DS
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
1

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SI2325DS Summary of contents

Page 1

... R R thJA Steady State Steady State R thJF Si2325DS Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies Ordering Information: Si2325DS -T1—E3 5 sec Steady State −150 $20 −0.53 −0.69 −0.55 −0.43 −1.6 −1.0 −0.6 4.5 1.01 1.25 0.75 0.8 0.48 − ...

Page 2

... Si2325DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On Resistance Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage ...

Page 3

... V 0 500 400 300 200 100 0 1.2 1.4 1.6 0 2.5 2.0 1.5 1.0 0.5 0 −50 Si2325DS Vishay Siliconix Transfer Characteristics T = 125_C C 25_C −55_C − Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss 120 V − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si2325DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Threshold Voltage 1 250 mA D 1.0 0.7 0.4 0.1 −0.2 −0.5 −50 − − Temperature (_C) J www.vishay.com 4 New Product 3.0 2.5 2.0 1.5 1 25_C J 0.5 0.0 1.0 1.2 1.4 100 125 150 Safe Operating Area ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73238. Document Number: 73238 S-42449—Rev. A, 10-Jan-05 New Product −2 − Square Wave Pulse Duration (sec) Si2325DS Vishay Siliconix Notes ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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