SI2318DS Vishay, SI2318DS Datasheet

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SI2318DS

Manufacturer Part Number
SI2318DS
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
b.
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (drain)
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
i
V
DS
40
40
J
(V)
ti
a, b
a, b
t A bi
b
J
J
= 150_C)
= 150_C)
t
a
a
0.058 @ V
0.045 @ V
Parameter
Parameter
r
DS(on)
a, b
a, b
GS
GS
N-Channel 40-V (D-S) MOSFET
(W)
= 4.5 V
= 10 V
G
S
a, b
1
2
*Marking Code
Si2318DS( C8)*
(SOT-23)
Top View
TO-236
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
New Product
I
D
3.9
3.5
3
(A)
D
Ordering Information: Si2318DS-T1 (with Tape and Reel)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
I
I
DM
thJA
thJF
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Stepper Motors
D Load Switch
Typical
5 sec
1.25
120
3.9
3.1
0.8
75
40
- 55 to 150
"20
0.8
40
16
Steady State
Maximum
Vishay Siliconix
0.75
0.48
100
166
3.0
2.4
50
Si2318DS
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI2318DS Summary of contents

Page 1

... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 72322 S-31731—Rev. A, 18-Aug-03 New Product I (A) D 3.9 3.5 TO-236 (SOT-23 Ordering Information: Si2318DS-T1 (with Tape and Reel Top View Si2318DS( C8)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C A ...

Page 2

... Si2318DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On Resistance Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage ...

Page 3

... 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Document Number: 72322 S-31731—Rev. A, 18-Aug-03 New Product 25_C J 1.0 1.2 1.4 Si2318DS Vishay Siliconix Capacitance 800 C 600 iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si2318DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 75 100 125 150 Safe Operating Area, Junction-to-Case 100 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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