SUD50P04-23 Vishay, SUD50P04-23 Datasheet

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SUD50P04-23

Manufacturer Part Number
SUD50P04-23
Description
P-channel 40-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50P04-23-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUD50P04-23-GE3
Quantity:
1 800
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 74423
S-70198-Rev. A, 29-Jan-07
Order Number:
SUD50P04-23-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
G
V
Top View
TO-252
DS
- 40
D
(V)
S
Drain Connected to Tab
0.030 at V
0.023 at V
r
DS(on)
GS
GS
J
(Ω)
P-Channel 40-V (D-S), 175 °C MOSFET
= 4.5 V
= 150 °C)
= 10 V
b
SUU50P04-23-E3 (Lead (Pb)-free)
Order Number:
G
Top View
TO-251
D
I
D
- 20
- 20
(A)
S
a
A
and DRAIN-TAB
New Product
= 25 °C, unless otherwise noted
Q
20.6 nC
Steady State
Steady State
T
T
T
T
L = 0.1 mH
g
T
T
T
T
T
T
C
A
C
A
C
C
C
A
A
A
(Typ)
= 100 °C
= 100 °C
= 100 °C
= 100 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• LCD TV Inverter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJC
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
2.75
40
G
P-Channel MOSFET
- 55 to 175
SUU/SUD50P04-23
- 8.2
- 2.5
Limit
- 20
- 20
-5.7
- 20
± 16
45.4
22.7
3.1
1.5
- 40
- 50
- 20
20
b
b
a
a
b
a
b
b
S
D
Maximum
3.3
48
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

Related parts for SUD50P04-23

SUD50P04-23 Summary of contents

Page 1

... V GS TO-252 Drain Connected to Tab Top View Order Number: Order Number: SUD50P04-23-E3 (Lead (Pb)-free) SUU50P04-23-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SUU/SUD50P04-23 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Gate-to-Source Voltage Document Number: 74423 S-70198-Rev. A, 29-Jan- thru 0. °C C 0.04 0.03 125 °C 0.02 0.01 0. 3000 2400 1800 1200 600 SUU/SUD50P04-23 Vishay Siliconix 2.0 1.6 1.2 0 125 °C C 0.4 25 ° °C 0.0 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUU/SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 100 150 ° 0.1 0.01 0.001 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage ...

Page 5

... Ambient Temperature (°C) A Current Derating*, Junction-to-Ambient Document Number: 74423 S-70198-Rev. A, 29-Jan- 100 BVDSS Limited 10 100 is specified DS(on) 125 150 175 SUU/SUD50P04-23 Vishay Siliconix 100 *Limited by r DS(on °C C Single Pulse 0.1 BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage (V) ...

Page 6

... SUU/SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.70 2.96 2.22 1.48 0.74 0. 100 T - Ambient Temperature (°C) A Power Derating*, Junction-to-Ambient *The power dissipation P is based J(max) sipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 74423 S-70198-Rev. A, 29-Jan- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUU/SUD50P04-23 Vishay Siliconix Notes Duty Cycle ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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