SUB85N03-04P Vishay, SUB85N03-04P Datasheet

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SUB85N03-04P

Manufacturer Part Number
SUB85N03-04P
Description
N-channel 30-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUB85N03-04P
Manufacturer:
ST
0
Part Number:
SUB85N03-04P
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
d.
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
Ordering Information: SUP85N03-04P (TO-220AB)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
ti
30
30
t A bi
SUP85N03-04P
TO-220AB
(V)
Top View
G D S
t
SUB85N03-04P (TO-263, D
SUB85N03-04P—E3 (TO-263, D
J
J
b
b
b
= 175_C)
= 175_C)
DRAIN connected to TAB
0.0043 @ V
N-Channel 30-V (D-S) 175_C MOSFET
0.007 @ V
Parameter
Parameter
r
DS(on)
GS
GS
T
(W)
= 4.5 V
C
= 10 V
= 25_C (TO-220AB and TO-263)
2
PAK)
PCB Mount (TO-263)
T
Free Air (TO-220AB)
2
A
PAK, Lead Free)
= 25_C (TO-263)
T
L = 0.1 mH
T
C
A
C
= 100_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
SUB85N03-04P
I
D
d
85
85
d
G
(D
Top View
(A)
TO-263
a
a
2
PAK)
D
a
S
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D TO-263 (D
SUP/SUB85N03-04P
2
PAK) 100% R
G
−55 to 175
N-Channel MOSFET
Limit
Limit
"20
166
3.75
62.5
240
280
85
85
0.9
30
75
40
a
a
c
Vishay Siliconix
D
S
g
Tested
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
A
A
1

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SUB85N03-04P Summary of contents

Page 1

... 0.007 @ V GS TO-220AB DRAIN connected to TAB Top View SUP85N03-04P Ordering Information: SUP85N03-04P (TO-220AB) SUB85N03-04P (TO-263, D SUB85N03-04P—E3 (TO-263, D ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current ...

Page 2

... SUP/SUB85N03-04P Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V − Drain-to-Source Voltage (V) DS Document Number: 71241 S-40101—Rev. C, 26-Jan- 0.008 25_C 0.006 125_C 0.004 0.002 0.000 80 100 24 30 SUP/SUB85N03-04P Vishay Siliconix Transfer Characteristics 250 200 150 100 T = 125_C C 50 25_C −55_C − Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUP/SUB85N03-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 100 10 1 100 ...

Page 5

... S-40101—Rev. C, 26-Jan-04 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −3 −2 − Square Wave Pulse Duration (sec) SUP/SUB85N03-04P Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 − Drain-to-Source Voltage ( ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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