SUB75N06-08 Vishay, SUB75N06-08 Datasheet
SUB75N06-08
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SUB75N06-08 Summary of contents
Page 1
... Top View SUB75N06-08 = 25_C UNLESS OTHERWISE NOTED) C Symbol T = 25_C 125_C 0 25_C (TO-220AB and TO-263 25_C (TO-263) A Symbol d PCB Mount (TO-263) Free Air (TO-220AB) SUP/SUB75N06-08 Vishay Siliconix N-Channel MOSFET Limit V " 240 280 ...
Page 2
... SUP/SUB75N06-08 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... V – Drain-to-Source Voltage (V) DS Document Number: 70283 S-05111—Rev. F, 10-Dec- 25_C 125_C 80 100 C iss SUP/SUB75N06-08 Vishay Siliconix Transfer Characteristics 200 150 100 T = 125_C 50 C 25_C – Gate-to-Source Voltage (V) GS On-Resistance vs ...
Page 4
... SUP/SUB75N06-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 –50 – – Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 100 T – Case Temperature (_C) ...