SI1026X Vishay, SI1026X Datasheet - Page 4

• Manufacturer Part Number: SI1026X
• Description: N-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Si1026X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71434.
www.vishay.com
4
1000
100
10
1
0.01
0.1
0
2
1
10
V
-4
GS
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
= 0 V
0.3
= 125 °C
V
SD
- Source-to-Drain Voltage (V)
0.6
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 0.2
- 0.4
- 0.6
- 0.8
0.9
T
0.4
0.2
J
- 0
T
= - 55 °C
J
- 50
Threshold Voltage Variance Over Temperature
= 25 °C
10
- 25
1.2
-2
T
0
J
- Junction Temperature (°C)
1.5
Square Wave Pulse Duration (s)
25
10
-1
50
I
D
= 250 µA
75
100
1
5
4
3
2
1
0
125
0
On-Resistance vs. Gate-to-Source Voltage
150
2
I
D
V
GS
= 200 mA
- Gate-to-Source Voltage (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
4
- T
A
t
1
= P
t
S-80643-Rev. C, 24-Mar-08
2
DM
Document Number: 71434
Z
6
I
thJA
D
thJA
100
= 500 mA
t
t
1
2
(t)
= 500 °C/W
8
6
0
0
10