SUM60N10-17 Vishay, SUM60N10-17 Datasheet

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SUM60N10-17

Manufacturer Part Number
SUM60N10-17
Description
N-channel 100-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SUM60N10-17
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SUM60N10-17
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Notes
a.
b.
c.
d.
Document Number: 72070
S-22063—Rev. A, 18-Nov-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case (Drain)
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
100
SUM60N10-17
G
Top View
TO-263
(V)
D
S
J
b
b
= 175_C)
N-Channel 100-V (D-S) 175_C MOSFET
0.0165 @ V
Parameter
Parameter
0.019 @ V
_
r
DS(on)
GS
GS
(W)
= 10 V
= 6 V
PCB Mount (TO-263)
G
T
L = 0.1 mH
T
T
T
C
A
N-Channel MOSFET
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
d
D
S
I
D
d
60
56
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
AR
GS
DS
AR
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D PWM Optimized for Fast Switching
APPLICATIONS
D Isolated DC/DC converters
- Primary-Side Switch
-55 to 175
Limit
Limit
"20
150
3.75
100
100
60
34
1.0
40
80
40
a
a
c
Vishay Siliconix
SUM60N10-17
www.vishay.com
Unit
Unit
_
_C/W
mJ
_C
W
V
A
1

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SUM60N10-17 Summary of contents

Page 1

... 25_C Symbol d PCB Mount (TO-263) R thJA R thJC SUM60N10-17 Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package D PWM Optimized for Fast Switching APPLICATIONS D Isolated DC/DC converters - Primary-Side Switch Limit 100 " ...

Page 2

... SUM60N10-17 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 72070 S-22063—Rev. A, 18-Nov-02 New Product 0.025 0.020 25_C 0.015 125_C 0.010 0.005 0.000 100 SUM60N10-17 Vishay Siliconix Transfer Characteristics 120 100 125_C C 20 25_C Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (_C) J www.vishay.com 4 New Product 100 10 1 100 125 150 175 0 On-Resistance vs. Junction Temperature 130 125 120 115 110 105 ...

Page 5

... Document Number: 72070 S-22063—Rev. A, 18-Nov-02 New Product 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - 2 10 Square Wave Pulse Duration (sec) SUM60N10-17 Vishay Siliconix Safe Operating Area Limited by r DS(on 100 100 25_C C Single Pulse 0 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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